SCHEMBL1362601

SCHEMBL1362601

O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CA2 P00918 17/20 0.38
CA1 P00915 16/20 0.38
MMP1 P03956 6/20 0.38
MMP2 P08253 6/20 0.38
MMP9 P14780 6/20 0.38
MMP8 P22894 6/20 0.38
MMP13 P45452 6/20 0.38
PTPN1 P18031 1/20 0.35
F2 P00734 1/20 0.33
PRSS1 P07477 1/20 0.33
PRSS2 P07478 1/20 0.33
PRSS3 P35030 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL51422 0.83 CA2 (0.38) CA2CA1MMP1MMP2MMP9
Biphenyl SCHEMBL1816739 0.82 PTPN1 (0.47) CA2CA1MMP1MMP2MMP9
SCHEMBL59303 0.81 CA2 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL213386 0.81 CA2 (0.40) CA2CA1MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL758916 0.81 PTPN1 (0.41) CA2CA1PTPN1
Perflubutane SCHEMBL2313825 0.81 ALDH1A1 (0.38) CA2CA1PTPN1
Benzenethiol SCHEMBL29745974 0.81 CA2 (0.39) CA2CA1MMP1MMP2MMP9
Iodobenzene SCHEMBL5315922 0.81 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL13836717 0.81 TSHR (0.57) CA2CA1MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL12613417 0.80 GPR3 (0.40) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8067148-B2 Pattern forming method PANASONIC CORPORATION (JP) 2011-11-29 US claimed
US-7943285-B2 Forming intermediate layer pattern by etching intermediate film with first resist pattern used as a mask; high resolution attained by double patterning; treatment with acetic, formic, methansulfonic, or butanesulfonic acid; immersion lithography; crosslinking, annealing PANASONIC CORPORATION (JP) 2011-05-17 US claimed
US-20100221672-A1 PATTERN FORMING METHOD PANASONIC CORPORATION (JP) 2010-09-02 US claimed
US-20080227038-A1 PATTERN FORMATION METHOD PANASONIC CORPORATION (JP) 2008-09-18 US claimed
US-8067148-B2 Pattern forming method PANASONIC CORPORATION (JP) 2011-11-29 US disclosed
US-7943285-B2 Forming intermediate layer pattern by etching intermediate film with first resist pattern used as a mask; high resolution attained by double patterning; treatment with acetic, formic, methansulfonic, or butanesulfonic acid; immersion lithography; crosslinking, annealing PANASONIC CORPORATION (JP) 2011-05-17 US disclosed
US-20100221672-A1 PATTERN FORMING METHOD PANASONIC CORPORATION (JP) 2010-09-02 US disclosed
US-20080227038-A1 PATTERN FORMATION METHOD PANASONIC CORPORATION (JP) 2008-09-18 US disclosed