Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 18/20 | 0.40 |
| ▸ | CA1 | P00915 | 17/20 | 0.39 |
| ▸ | MMP1 | P03956 | 3/20 | 0.38 |
| ▸ | MMP2 | P08253 | 3/20 | 0.38 |
| ▸ | MMP9 | P14780 | 3/20 | 0.38 |
| ▸ | MMP8 | P22894 | 3/20 | 0.38 |
| ▸ | MMP13 | P45452 | 3/20 | 0.38 |
| ▸ | GPR3 | P46089 | 1/20 | 0.34 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL59303 | 1.00 | CA2 (0.40) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL51422 | 0.98 | CA2 (0.38) | CA2CA1MMP1MMP2MMP9 | |
| Trifluoromethanesulfonic Acid SCHEMBL12613417 | 0.95 | GPR3 (0.40) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL3284031 | 0.93 | CA2 (0.35) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL1805421 | 0.91 | CA2 (0.34) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL7702939 | 0.90 | GPR3 (0.35) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL5372804 | 0.89 | HSD11B1 (0.37) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL2901040 | 0.88 | MMP2 (0.43) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL1800746 | 0.88 | ALDH1A1 (0.37) | MMP1MMP9MMP13 | |
| SCHEMBL7708260 | 0.87 | HSD11B1 (0.38) | CA2CA1MMP1MMP2MMP9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1291 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-121873631-B | Spin-on carbon composition, semiconductor preparation method and semiconductor device | Jiageng Innovation Laboratory (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-122011922-A | Bottom anti-reflection coating composition and preparation and application thereof | 嘉庚创新实验室 | 2026-05-12 | — | — | CN | claimed |
| CN-119463004-B | 3, 4-Dihydroxystyrene polymer, preparation thereof and photoresist composition | 微芯新材料(湖州)有限公司 | 2025-06-10 | — | — | CN | claimed |
| CN-120005123-A | Acrylic ester block copolymer resin, photoresist, and preparation method and application thereof | 中国石油化工股份有限公司 | 2025-05-16 | — | — | CN | claimed |
| CN-119923600-A | Chemically amplified positive resist composition for improving pattern profile and enhancing adhesion | YC化学制品株式会社 | 2025-05-02 | — | — | CN | claimed |
| CN-119463004-A | 3, 4-Dihydroxystyrene polymer, preparation thereof and photoresist composition | 微芯新材料(湖州)有限公司 | 2025-02-18 | — | — | CN | claimed |
| CN-119463075-A | Poly (4-hydroxystyrene) -based block copolymer and preparation and application thereof | 微芯新材料(湖州)有限公司 | 2025-02-18 | — | — | CN | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| CN-115368494-B | Monomer copolymer containing hexafluoroisopropanol, preparation method thereof, chemical amplification type photoresist and application thereof | 瑞红(苏州)电子化学品股份有限公司 | 2024-03-29 | — | — | CN | claimed |
| US-11906900-B2 | Chemically amplified positive photoresist composition for improving pattern profile | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2024-02-20 | — | — | US | claimed |
| US-20070298176-A1 | AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY | GLOBALFOUNDRIES INC. (KY) | 2007-12-27 | — | — | US | claimed |
| US-7312014-B2 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2007-12-25 | — | — | US | claimed |
| US-7157755-B2 | Polymer sacrificial light absorbing structure and method | INTEL CORPORATION (US) | 2007-01-02 | — | — | US | claimed |
| US-20050145890-A1 | Polymer sacrificial light absorbing structure and method | GOODNER MICHAEL D (US) | 2005-07-07 | — | — | US | claimed |
| US-6876017-B2 | Polymer sacrificial light absorbing structure and method | INTEL CORPORATION (US) | 2005-04-05 | — | — | US | claimed |
| US-6800418-B2 | ALLOWING DEVELOPMENT WITH CONVENTIONAL DEVELOPERS AND HAVING A HIGH TRANSMITTANCE AT A F2 EXCIMER LASER WAVELENGTH OF 157 NM, HYDROPHILICITY, ADHESION TO UNDERLAYER | SAMSUNG ELECTRONICS (KR) | 2004-10-05 | — | — | US | claimed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | claimed |
| US-20040157415-A1 | Polymer sacrificial light absorbing structure and method | INTEL CORPORATION | 2004-08-12 | — | — | US | claimed |
| EP-1406123-A1 | RESIST COMPOSITIONS | Wako Pure Chemical Industries, Ltd. (JP) | 2004-04-07 | — | — | EP | claimed |
| US-20030157430-A1 | Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same | SAMSUNG ELECTRONICS CO., LTD. | 2003-08-21 | — | — | US | claimed |