Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PTPN1 | P18031 | 3/20 | 0.41 |
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.39 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.38 |
| ▸ | MAPT | P10636 | 1/20 | 0.38 |
| ▸ | HPGD | P15428 | 1/20 | 0.38 |
| ▸ | CA1 | P00915 | 1/20 | 0.38 |
| ▸ | CA2 | P00918 | 1/20 | 0.38 |
| ▸ | CA5A | P35218 | 1/20 | 0.38 |
| ▸ | CA9 | Q16790 | 1/20 | 0.38 |
| ▸ | CES1 | P23141 | 2/20 | 0.35 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.34 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.34 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.33 |
| ▸ | GPR3 | P46089 | 1/20 | 0.33 |
| ▸ | EDNRA | P25101 | 1/20 | 0.32 |
| ▸ | SRC | P12931 | 1/20 | 0.32 |
| ▸ | HTR6 | P50406 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL30407359 | 0.91 | GPR3 (0.43) | PTPN1TSHRSMN1; SMN2KDM4EMAPT | |
| Trifluoromethanesulfonic Acid SCHEMBL1002308 | 0.86 | HSD11B1 (0.40) | PTPN1MAPTCA1CA2ALDH1A1 | |
| Trifluoromethanesulfonic Acid SCHEMBL756610 | 0.85 | EDNRA (0.43) | CES1ALDH1A1HSD11B1EDNRA | |
| Sulfuric Acid SCHEMBL1780831 | 0.84 | KDM4E (0.50) | TSHRSMN1; SMN2KDM4EMAPTHPGD | |
| Trifluoromethanesulfonic Acid SCHEMBL36177 | 0.83 | GPR3 (0.50) | PTPN1CA1CA2CA5ACA9 | |
| Trifluoromethanesulfonic Acid SCHEMBL1051927 | 0.82 | ALDH1A1 (0.37) | PTPN1TSHRCA2ALDH1A1HSD11B1 | |
| SCHEMBL1362601 | 0.81 | CA2 (0.38) | PTPN1CA1CA2 | |
| SCHEMBL1718014 | 0.79 | KEAP1 (0.44) | TSHRSMN1; SMN2KDM4EMAPTHPGD | |
| Sulfuric Acid SCHEMBL1062108 | 0.79 | TSHR (0.44) | TSHRSMN1; SMN2KDM4EMAPTHPGD | |
| Biphenyl SCHEMBL1050411 | 0.79 | PTPN1 (0.58) | PTPN1TSHRSMN1; SMN2MAPTCA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8067148-B2 | Pattern forming method | PANASONIC CORPORATION (JP) | 2011-11-29 | — | — | US | claimed |
| US-7943285-B2 | Forming intermediate layer pattern by etching intermediate film with first resist pattern used as a mask; high resolution attained by double patterning; treatment with acetic, formic, methansulfonic, or butanesulfonic acid; immersion lithography; crosslinking, annealing | PANASONIC CORPORATION (JP) | 2011-05-17 | — | — | US | claimed |
| US-20100221672-A1 | PATTERN FORMING METHOD | PANASONIC CORPORATION (JP) | 2010-09-02 | — | — | US | claimed |
| US-20080227038-A1 | PATTERN FORMATION METHOD | PANASONIC CORPORATION (JP) | 2008-09-18 | — | — | US | claimed |
| US-20040161710-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-08-19 | — | — | US | claimed |
| US-6566036-B2 | Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization | NEC ELECTRONICS CORPORATION (JP) | 2003-05-20 | — | — | US | claimed |
| US-20010009749-A1 | Chemically amplified resist | NEC CORPORATION | 2001-07-26 | — | — | US | claimed |
| US-11970587-B2 | Covering material, cable, and method of manufacturing cable | PROTERIAL, LTD. (JP) | 2024-04-30 | — | — | US | disclosed |
| CN-113785005-A | Curing composition | 美国圣戈班性能塑料公司 | 2021-12-10 | — | — | CN | disclosed |
| US-20210317317-A1 | ORGANIC INORGANIC COMPOSITE PARTICLE, METHOD FOR PRODUCING SAME, AND APPLICATION THEREOF | SEKISUI KASEl CO., LTD. (JP) | 2021-10-14 | — | — | US | disclosed |
| EP-3888615-A1 | DENTAL PHOTOCURABLE COMPOSITION CONTAINING HIGH SOLUBLE PHOTOACID GENERATOR | Shofu Inc. (JP) | 2021-10-06 | — | — | EP | disclosed |
| WO-2021149542-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMATION METHOD | 信越化学工業株式会社 | 2021-07-29 | — | — | WO | disclosed |
| EP-3835328-A1 | ORGANIC INORGANIC COMPOSITE PARTICLE, METHOD FOR PRODUCING SAME, AND APPLICATION THEREOF | Sekisui Kasei Co., Ltd. (JP) | 2021-06-16 | — | — | EP | disclosed |
| US-7163778-B2 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-20040191479-A1 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| US-20040161710-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-08-19 | — | — | US | disclosed |
| US-6566036-B2 | Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization | NEC ELECTRONICS CORPORATION (JP) | 2003-05-20 | — | — | US | disclosed |
| US-6280897-B1 | GENERATION OF ACID WITH ACTINIC RADIATION | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-08-28 | — | — | US | disclosed |
| US-20010009749-A1 | Chemically amplified resist | NEC CORPORATION | 2001-07-26 | — | — | US | disclosed |
| US-5863699-A | FORMS A PATTERN THROUGH LIGHT-EXPOSURE WITH EITHER ARGON FLUORIDE OR FLUORINE EXCIMER LASERS, COMPRISES A COMPOUND HAVING EITHER AN ACID-DECOMPOSABLE OR ACID-CROSSLINKABLE GROUP | KABUSHIKI KAISHA TOSHIBA (JP) | 1999-01-26 | — | — | US | disclosed |