SCHEMBL13683054

SCHEMBL13683054

CCC(C)C(=O)OCCOCOc1ccc(-c2ccccc2)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 2/20 0.48
SMN1; SMN2 Q16637 2/20 0.45
NPC1 O15118 2/20 0.45
RAB9A P51151 2/20 0.45
CYP1A2 P05177 1/20 0.43
GAA P10253 1/20 0.43
CYP2C9 P11712 1/20 0.43
PKM P14618 1/20 0.43
CYP2C19 P33261 1/20 0.43
RARB P10826 1/20 0.43
MMP3 P08254 1/20 0.43
PPARG P37231 2/20 0.42
PPARA Q07869 2/20 0.42
PPARD Q03181 1/20 0.42
HDAC1 Q13547 8/20 0.42
HDAC2 Q92769 8/20 0.42
HDAC3 O15379 7/20 0.42
HDAC4 P56524 7/20 0.42
HDAC7 Q8WUI4 7/20 0.42
HDAC10 Q969S8 7/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12159342 0.92 RARB (0.52) MAPTSMN1; SMN2NPC1RAB9ARARB
SCHEMBL13683026 0.92 TDP1 (0.46) SMN1; SMN2NPC1RAB9APKMFFAR1
SCHEMBL13683063 0.90 RXRA (0.46) HDAC1HDAC2HDAC3HDAC4HDAC7
SCHEMBL14010344 0.89 MAPT (0.52) MAPTSMN1; SMN2NPC1RAB9ACYP1A2
SCHEMBL18803380 0.85 HDAC1 (0.56) MAPTRARBPPARGPPARAPPARD
SCHEMBL13683048 0.85 LTA4H (0.41) SMN1; SMN2CYP1A2CYP2C19
SCHEMBL13683040 0.85 MEN1 (0.48) MAPTSMN1; SMN2NPC1PPARGPPARA
SCHEMBL10050642 0.84 GAA (0.54) MAPTRAB9AGAAPKMRARB
SCHEMBL13683061 0.84 PPARG (0.48) MAPTSMN1; SMN2NPC1RAB9APPARG
SCHEMBL13683047 0.83 CYP1A2 (0.42) MAPTNPC1RAB9ACYP1A2CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed