SCHEMBL13683040

SCHEMBL13683040

CCC(C)C(=O)OCCOCOc1ccc(C)cc1

nearest known ligand 0.48

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 3/20 0.48
KMT2A Q03164 3/20 0.48
L3MBTL1 Q9Y468 2/20 0.44
TDP1 Q9NUW8 2/20 0.40
NPC1 O15118 1/20 0.39
HPGD P15428 2/20 0.39
ALDH1A1 P00352 2/20 0.39
TP53 P04637 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
MAPT P10636 2/20 0.38
PTGES O14684 1/20 0.38
ALOX5 P09917 1/20 0.38
PPARG P37231 1/20 0.38
PPARA Q07869 1/20 0.38
KDM4E B2RXH2 1/20 0.38
POLB P06746 1/20 0.37
TRPM8 Q7Z2W7 1/20 0.37
TSHR P16473 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683048 0.88 LTA4H (0.41) MEN1KMT2ATDP1ALDH1A1SMN1; SMN2
SCHEMBL13683047 0.87 CYP1A2 (0.42) MEN1KMT2AL3MBTL1NPC1ALDH1A1
SCHEMBL13683026 0.87 TDP1 (0.46) MEN1KMT2ATDP1NPC1HPGD
SCHEMBL13683038 0.86 L3MBTL1 (0.52) KMT2AL3MBTL1TDP1HPGDSMN1; SMN2
SCHEMBL13683054 0.85 MAPT (0.48) NPC1SMN1; SMN2MAPTPTGESALOX5
SCHEMBL12347969 0.84 MEN1 (0.56) MEN1KMT2AL3MBTL1TDP1NPC1
SCHEMBL13683061 0.82 PPARG (0.48) MEN1KMT2ATDP1NPC1ALDH1A1
SCHEMBL25493417 0.82 L3MBTL1 (0.48) MEN1KMT2AL3MBTL1TDP1NPC1
SCHEMBL25821476 0.80 KMT2A (0.43) MEN1KMT2AL3MBTL1TDP1NPC1
SCHEMBL13683050 0.80 CHRNB2 (0.43) L3MBTL1TDP1ALDH1A1SMN1; SMN2KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed