SCHEMBL13683026

SCHEMBL13683026

CCC(C)C(=O)OCCOCOc1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.46
KDM4E B2RXH2 2/20 0.43
MEN1 O00255 2/20 0.43
KMT2A Q03164 2/20 0.43
NPSR1 Q6W5P4 1/20 0.43
THRB P10828 1/20 0.42
FFAR1 O14842 1/20 0.42
LMNA P02545 1/20 0.41
MTNR1A P48039 4/20 0.41
MTNR1B P49286 4/20 0.41
NPC1 O15118 2/20 0.41
RAB9A P51151 2/20 0.41
SMN1; SMN2 Q16637 2/20 0.41
TSHR P16473 1/20 0.41
RECQL P46063 1/20 0.40
ALOX15 P16050 1/20 0.40
ALDH1A1 P00352 1/20 0.39
HPGD P15428 1/20 0.39
NFKB1 P19838 1/20 0.39
NFKB2 Q00653 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683054 0.92 MAPT (0.48) FFAR1NPC1RAB9ASMN1; SMN2PKM
SCHEMBL19680357 0.91 TDP1 (0.49) TDP1KDM4EMEN1KMT2ANPSR1
SCHEMBL12032774 0.91 TDP1 (0.49) TDP1KDM4EMEN1KMT2ANPSR1
SCHEMBL13683063 0.90 RXRA (0.46) FFAR1
SCHEMBL6721427 0.89 THRB (0.53) TDP1KDM4EMEN1KMT2ANPSR1
SCHEMBL13683038 0.88 L3MBTL1 (0.52) TDP1KMT2ALMNASMN1; SMN2HPGD
SCHEMBL13683040 0.87 MEN1 (0.48) TDP1KDM4EMEN1KMT2ANPC1
SCHEMBL13683048 0.87 LTA4H (0.41) TDP1KDM4EMEN1KMT2ALMNA
SCHEMBL13683061 0.86 PPARG (0.48) TDP1KDM4EMEN1KMT2ANPSR1
SCHEMBL13683050 0.86 CHRNB2 (0.43) TDP1KDM4EMTNR1AMTNR1BSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed