SCHEMBL13683048

SCHEMBL13683048

CCC(C)C(=O)OCCOCOc1ccc(O)cc1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.41
NR5A1 Q13285 1/20 0.41
ESR1 P03372 2/20 0.39
TSHR P16473 2/20 0.39
LMNA P02545 1/20 0.39
CYP1A2 P05177 1/20 0.39
CYP2D6 P10635 1/20 0.39
MAPK1 P28482 1/20 0.39
CYP2C19 P33261 1/20 0.39
NR1H2 P55055 1/20 0.39
RNASEL Q05823 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
KDM4E B2RXH2 1/20 0.38
ABCG2 Q9UNQ0 2/20 0.37
TDP1 Q9NUW8 2/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
ALDH1A1 P00352 1/20 0.37
CHRM1 P11229 1/20 0.37
SLC6A2 P23975 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27652847 0.89 LTA4H (0.49) LTA4HNR5A1ESR1TSHRLMNA
SCHEMBL13683040 0.88 MEN1 (0.48) TSHRSMN1; SMN2KDM4ETDP1MEN1
SCHEMBL13683047 0.87 CYP1A2 (0.42) TSHRLMNACYP1A2MAPK1CYP2C19
SCHEMBL13683026 0.87 TDP1 (0.46) TSHRLMNASMN1; SMN2KDM4ETDP1
SCHEMBL13683050 0.85 CHRNB2 (0.43) TSHRMAPK1SMN1; SMN2KDM4ETDP1
SCHEMBL13683054 0.85 MAPT (0.48) CYP1A2CYP2C19SMN1; SMN2
SCHEMBL13683061 0.82 PPARG (0.48) MAPK1SMN1; SMN2KDM4ETDP1MEN1
SCHEMBL13683038 0.81 L3MBTL1 (0.52) LMNASMN1; SMN2TDP1KMT2A
SCHEMBL13683045 0.79 HTT (0.49) KDM4ETDP1MEN1KMT2A
SCHEMBL2742154 0.78 NPC1 (0.50) ESR1TSHRLMNASMN1; SMN2KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed