SCHEMBL13683066

SCHEMBL13683066

CCC(C)(C)C(=O)OCCOCOc1ccc2ccccc2c1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PPARG P37231 7/20 0.47
PPARA Q07869 6/20 0.47
PPARD Q03181 3/20 0.47
KDM4E B2RXH2 3/20 0.47
MAPK1 P28482 1/20 0.47
TDP1 Q9NUW8 1/20 0.47
ALDH1A1 P00352 1/20 0.46
RAB9A P51151 2/20 0.44
PTPN7 P35236 1/20 0.43
MAPT P10636 2/20 0.42
NPC1 O15118 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
KMT2A Q03164 2/20 0.40
MEN1 O00255 1/20 0.40
HTT P42858 1/20 0.40
NCOA2 Q15596 1/20 0.40
NCOA1 Q15788 1/20 0.40
NPSR1 Q6W5P4 1/20 0.40
NR2E3 Q9Y5X4 1/20 0.40
NCOR2 Q9Y618 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9880794 0.91 KDM4E (0.59) PPARGPPARAPPARDKDM4EMAPK1
SCHEMBL12112343 0.91 KDM4E (0.59) PPARGPPARAPPARDKDM4EMAPK1
SCHEMBL12787493 0.90 PPARG (0.54) PPARGPPARAPPARDKDM4EMAPK1
SCHEMBL13683041 0.87 TDP1 (0.44) PPARGPPARAKDM4ETDP1RAB9A
SCHEMBL12112341 0.86 KDM4E (0.52) PPARGPPARAPPARDKDM4EMAPK1
SCHEMBL13683058 0.85 NPC1 (0.46) RAB9AMAPTNPC1SMN1; SMN2HDAC1
SCHEMBL13683043 0.84 CHRNB2 (0.43) KDM4EMAPK1TDP1ALDH1A1KMT2A
SCHEMBL13683056 0.83 HDAC1 (0.46) KDM4EHDAC1
SCHEMBL13683046 0.83 CHRM2 (0.41) MAPK1ALDH1A1SMN1; SMN2
SCHEMBL13683037 0.83 MEN1 (0.47) PPARAPPARDALDH1A1MAPTNPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed