SCHEMBL13683056

SCHEMBL13683056

CCC(C)(C)C(=O)OCCOCOc1cccc(-c2ccccc2)c1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HDAC1 Q13547 2/20 0.46
HDAC2 Q92769 2/20 0.46
RXRA P19793 1/20 0.45
RXRB P28702 1/20 0.45
SLC13A5 Q86YT5 2/20 0.42
FFAR1 O14842 1/20 0.42
FFAR4 Q5NUL3 1/20 0.42
KDM4E B2RXH2 1/20 0.41
HRH3 Q9Y5N1 6/20 0.41
MRGPRX4 Q96LA9 1/20 0.41
GGPS1 O95749 1/20 0.41
HDAC3 O15379 1/20 0.40
HDAC4 P56524 1/20 0.40
HDAC7 Q8WUI4 1/20 0.40
HDAC10 Q969S8 1/20 0.40
HDAC11 Q96DB2 1/20 0.40
HDAC8 Q9BY41 1/20 0.40
HDAC6 Q9UBN7 1/20 0.40
HDAC9 Q9UKV0 1/20 0.40
HDAC5 Q9UQL6 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683058 0.90 NPC1 (0.46) HDAC1HDAC2HDAC3HDAC4HDAC7
SCHEMBL13683041 0.90 TDP1 (0.44) HDAC1HDAC2KDM4E
SCHEMBL13683043 0.86 CHRNB2 (0.43) KDM4E
SCHEMBL13683039 0.85 L3MBTL1 (0.50) KDM4E
SCHEMBL13683049 0.83 CYP3A4 (0.43) KDM4E
SCHEMBL13683066 0.83 PPARG (0.47) HDAC1KDM4E
SCHEMBL18219828 0.82 KDM4E (0.48) HDAC1HDAC2KDM4E
SCHEMBL12900758 0.82 KDM4E (0.48) HDAC1HDAC2KDM4E
SCHEMBL12900759 0.82 KDM4E (0.48) HDAC1HDAC2KDM4E
SCHEMBL11306567 0.82 KDM4E (0.48) HDAC1HDAC2KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed