SCHEMBL141328

SCHEMBL141328

CCCC(COC)C(=O)O

nearest known ligand 0.65

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HDAC1 Q13547 2/20 0.65
HDAC2 Q92769 2/20 0.65
CHRM1 P11229 1/20 0.65
AKR1A1 P14550 1/20 0.65
CHRM3 P20309 1/20 0.65
HTR2A P28223 1/20 0.65
HTR2C P28335 1/20 0.65
ADRA1A P35348 1/20 0.65
HRH1 P35367 1/20 0.65
DRD3 P35462 1/20 0.65
SLC6A3 Q01959 1/20 0.65
TDP1 Q9NUW8 1/20 0.65
SLC1A1 P43005 4/20 0.50
SLC1A2 P43004 3/20 0.50
GRIK1 P39086 3/20 0.50
GRIK2 Q13002 3/20 0.50
SLC1A3 P43003 2/20 0.50
CA2 P00918 2/20 0.45
MAPK1 P28482 1/20 0.45
CYP3A4 P08684 2/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1930750 0.87 CA2 (0.63) HDAC1HDAC2CHRM1AKR1A1CHRM3
SCHEMBL5514967 0.84 HDAC1 (0.70) HDAC1HDAC2CHRM1AKR1A1CHRM3
SCHEMBL2036581 0.83 CHRM1 (0.43) HDAC1HDAC2CHRM1AKR1A1CHRM3
SCHEMBL3285540 0.83 TDP1 (0.60) HDAC1HDAC2CHRM1AKR1A1CHRM3
SCHEMBL28210380 0.82 HDAC1 (0.46) HDAC1HDAC2CHRM1AKR1A1CHRM3
SCHEMBL139440 0.81
SCHEMBL4579756 0.81 CHRM1 (0.64) HDAC1HDAC2CHRM1AKR1A1CHRM3
SCHEMBL2245789 0.80 CHRM1 (0.62) HDAC1HDAC2CHRM1AKR1A1CHRM3
SCHEMBL28244713 0.80 CA1 (0.53) HDAC1HDAC2CHRM1AKR1A1CHRM3
Valproic Acid SCHEMBL2275 0.80 CHRM1 (1.00) HDAC1HDAC2CHRM1AKR1A1CHRM3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 709 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025106697-A1 BIO-BASED COMPOSITIONS FOR PHOTORESISTS AND PATTERNING HUSTAD PHILLIP DENE (US) 2025-05-22 WO claimed
WO-2025106703-A1 BIO-BASED COMPOSITIONS FOR PHOTORESISTS AND PATTERNING HUSTAD PHILLIP DENE (US) 2025-05-22 WO claimed
US-11822250-B2 Solution, method of forming resist pattern, and semiconductor device manufacturing method TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US claimed
EP-0907108-B1 Radiation-sensitive resin composition JSR CORP (JP) 2004-01-28 EP claimed
EP-4745668-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR PRODUCING LAMINATE TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-20 EP disclosed
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12631963-B2 Method for producing hollow package and method for providing photosensitive composition TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
WO-2026100268-A1 NEGATIVE PHOTOSENSITIVE FILM, MULTILAYER FILM, DRY FILM, AND NEGATIVE PHOTOSENSITIVE COMPOSITION 東京応化工業株式会社 2026-05-15 WO disclosed
US-12625428-B2 Stepped substrate coating composition including compound having photocrosslinking group due to unsaturated bond between carbon atoms NISSAN CHEMICAL CORPORATION (JP) 2026-05-12 US disclosed
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4722811-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2026-04-08 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
US-6368195-B1 Plastic abrasive for sandblasting, method for sandblast processing plasma display panel substrate using the same and method for treating sandblasting waste matters TOKYO OHKA KOGYO CO., LTD. (JP) 2002-04-09 US disclosed
US-6268108-B1 MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT TOKYO OHKA KOGYO CO., LTD. (JP) 2001-07-31 US disclosed
US-6126513-A Plastic abrasive for sandblasting, method for sandblast processing plasma display panel substrate using the same and method for treating sandblasting waste matters TOKYO OHKA KOGYO CO., LTD. (JP) 2000-10-03 US disclosed
US-6071673-A Method for the formation of resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2000-06-06 US disclosed
EP-0890417-A1 Plastic abrasive for sandblasting, method for sandblast processing plasma display panel substrate using the same and method for treating sandblasting waste matters TOKYO OHKA KOGYO CO., LTD. (JP) 1999-01-13 EP disclosed
US-5225590-A Alkoxy methyl ether and alkoxy methyl ester derivatives SYNTEX (U.S.A.) INC. (US) 1993-07-06 US disclosed
EP-0187297-B1 ALKOXY METHYL ETHER AND ALKOXY METHYL ESTER DERIVATIVES SYNTEX (U.S.A.) INC. (US) 1991-08-21 EP disclosed
EP-0187297-A2 Alkoxy methyl ether and alkoxy methyl ester derivatives SYNTEX (U.S.A.) INC. (US) 1986-07-16 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 HDAC1 3441/4885HDAC2 3875/4885CHRM1 3745/4885
US-12625428-B2 Stepped substrate coating composition including compound having photocrosslinking group due to unsaturated bond between carbon atoms SEM1, CDH1, EEF1D HDAC1 1132/4885HDAC2 1486/4885CHRM1 774/4885
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 HDAC1 889/4885HDAC2 2174/4885CHRM1 1698/4885
US-12631963-B2 Method for producing hollow package and method for providing photosensitive composition ASH2L, AS3MT, ASH1L HDAC1 2019/4885HDAC2 2828/4885CHRM1 713/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L HDAC1 2241/4885HDAC2 2755/4885CHRM1 1106/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.