SCHEMBL14642986

SCHEMBL14642986

C=C(c1ccccc1)C(C)OC

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 5/20 0.44
SMN1; SMN2 Q16637 4/20 0.44
NPSR1 Q6W5P4 3/20 0.44
LMNA P02545 3/20 0.44
XBP1 P17861 1/20 0.44
ATM Q13315 1/20 0.44
TSHR P16473 1/20 0.40
PTGS1 P23219 3/20 0.38
PTGS2 P35354 3/20 0.38
NPC1 O15118 1/20 0.38
RAB9A P51151 1/20 0.38
PAX8 Q06710 1/20 0.38
ALDH1A1 P00352 2/20 0.37
HPGD P15428 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
KMT2A Q03164 3/20 0.36
MEN1 O00255 1/20 0.35
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35
ELANE P08246 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11798431 0.84 MAPT (0.45) MAPTSMN1; SMN2NPSR1LMNAXBP1
SCHEMBL14616575 0.81 LMNA (0.42) MAPTSMN1; SMN2NPSR1LMNAXBP1
SCHEMBL693987 0.77 SMN1; SMN2 (0.50) MAPTSMN1; SMN2NPSR1LMNAXBP1
SCHEMBL3246306 0.76 ALDH1A1 (0.50) MAPTSMN1; SMN2NPSR1LMNAXBP1
SCHEMBL9717408 0.76 SMN1; SMN2 (0.47) MAPTSMN1; SMN2NPSR1LMNAXBP1
SCHEMBL8934680 0.75 TSHR (0.38) MAPTSMN1; SMN2NPSR1LMNAXBP1
Hydrogen Sulfide SCHEMBL29028321 0.75 SMN1; SMN2 (0.48) MAPTSMN1; SMN2NPSR1LMNAXBP1
SCHEMBL3731992 0.75 LMNA (0.48) MAPTSMN1; SMN2NPSR1LMNAXBP1
SCHEMBL2598221 0.74 MAPT (0.53) MAPTSMN1; SMN2NPSR1LMNAXBP1
SCHEMBL28543627 0.74 NPC1 (0.56) MAPTSMN1; SMN2NPSR1TSHRPTGS1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20130017377-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2013-01-17 US disclosed