SCHEMBL15037542

SCHEMBL15037542

COCc1c(COC)c(COC)c2ccccc2c1COC

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 4/20 0.42
▸ KDM4E B2RXH2 3/20 0.42
▸ MAPK1 P28482 1/20 0.42
▸ SMN1; SMN2 Q16637 1/20 0.42
▸ CYP1A2 P05177 2/20 0.37
▸ CYP2C19 P33261 1/20 0.37
▸ MEN1 O00255 2/20 0.35
▸ KMT2A Q03164 2/20 0.35
▸ TNNI3 P19429 1/20 0.35
▸ TNNT2 P45379 1/20 0.35
▸ TNNC1 P63316 1/20 0.35
▸ HTT P42858 2/20 0.35
▸ NPC1 O15118 1/20 0.35
▸ ALOX12 P18054 1/20 0.35
▸ RAB9A P51151 1/20 0.35
▸ NPSR1 Q6W5P4 1/20 0.35
▸ LDHA P00338 1/20 0.34
▸ CNR1 P21554 1/20 0.34
▸ GABRP O00591 1/20 0.34
▸ GABRD O14764 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1334758 0.92 ALDH1A1 (0.43) ALDH1A1KDM4EMAPK1SMN1; SMN2CYP1A2
SCHEMBL29808111 0.92 ALDH1A1 (0.43) ALDH1A1KDM4EMAPK1SMN1; SMN2CYP1A2
SCHEMBL13497451 0.83 ALDH1A1 (0.37) ALDH1A1KDM4EMAPK1SMN1; SMN2CYP1A2
SCHEMBL14008509 0.81 KDM4E (0.39) ALDH1A1KDM4EMAPK1SMN1; SMN2MEN1
SCHEMBL4646633 0.77 HTR2A (0.54) ALDH1A1KDM4ECYP1A2CYP2C19MEN1
SCHEMBL9433474 0.75 KDM4E (0.57) ALDH1A1KDM4ESMN1; SMN2KMT2AHTT
SCHEMBL14008506 0.74 HTT (0.53) ALDH1A1KDM4ECYP1A2CYP2C19MEN1
SCHEMBL4646487 0.74 HSD17B10 (0.43) ALDH1A1KDM4EMAPK1CYP1A2CYP2C19
SCHEMBL9686447 0.74 KIF11 (0.46) ALDH1A1MAPK1SMN1; SMN2CYP1A2CYP2C19
SCHEMBL11314967 0.74 KDM4E (0.52) ALDH1A1KDM4EMAPK1SMN1; SMN2CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11320739-B2 Composition for resist underlayer film formation, resist underlayer film and method for producing patterned substrate JSR CORPORATION (JP) 2022-05-03 — — US disclosed
US-11243468-B2 Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method JSR CORPORATION (JP) 2022-02-08 — — US disclosed
US-11215928-B2 Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate JSR CORPORATION (JP) 2022-01-04 — — US disclosed
US-11126084-B2 Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound JSR CORPORATION (JP) 2021-09-21 — — US disclosed
US-11003079-B2 Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound JSR CORPORATION (JP) 2021-05-11 — — US disclosed
US-20190243247-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2019-08-08 — — US disclosed
US-20190212650-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND METHOD FOR FORMING THE SAME, AND PRODUCTION METHOD OF A PATTERNED SUBSTRATE JSR CORPORATION (JP) 2019-07-11 — — US disclosed
US-20190094695-A1 COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2019-03-28 — — US disclosed
US-9958781-B2 Method for film formation, and pattern-forming method JSR CORPORATION (JP) 2018-05-01 — — US disclosed
US-20180114698-A2 COMPOSITION FOR FILM FORMATION, FILM, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2018-04-26 — — US disclosed
US-20170137663-A9 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE JSR CORPORATION (JP) 2017-05-18 — — US disclosed
US-9620378-B1 Composition for film formation, film, production method of patterned substrate, and compound JSR CORPORATION (JP) 2017-04-11 — — US disclosed
US-20160314984-A1 METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-10-27 — — US disclosed
US-20160257842-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE JSR CORPORATION (JP) 2016-09-08 — — US disclosed
US-20160011512-A1 COMPOSITION, METHOD FOR PRODUCING PATTERNED SUBSTRATE, FILM AND FORMING METHOD THEREOF, AND COMPOUND JSR CORPORATION (JP) 2016-01-14 — — US disclosed
US-9091922-B2 Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method JSR CORPORATION (JP) 2015-07-28 — — US disclosed
US-20150198882-A9 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND RESIST UNDERLAYER FILM-FORMING METHOD, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-07-16 — — US disclosed
US-20140272722-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND RESIST UNDERLAYER FILM-FORMING METHOD, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-09-18 — — US disclosed
US-20140014620-A9 RESIN COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING METHOD AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-01-16 — — US disclosed
US-20130153535-A1 RESIN COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING METHOD AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-06-20 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20190094695-A1 COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND RER1, TOP1, RIF1 ALDH1A1 1845/4885KDM4E 1066/4885MAPK1 2366/4885
US-11003079-B2 Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound RER1, TOP1, RIF1 ALDH1A1 1845/4885KDM4E 1066/4885MAPK1 2366/4885
US-11126084-B2 Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound EMG1, FN1, TOP1 ALDH1A1 849/4885KDM4E 423/4885MAPK1 2804/4885
US-20190243247-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND EMG1, FN1, TOP1 ALDH1A1 849/4885KDM4E 423/4885MAPK1 2804/4885
US-20160011512-A1 COMPOSITION, METHOD FOR PRODUCING PATTERNED SUBSTRATE, FILM AND FORMING METHOD THEREOF, AND COMPOUND PKN2, FOXK1, SPIN1 ALDH1A1 1624/4885KDM4E 712/4885MAPK1 1960/4885
US-11215928-B2 Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate TOP1, OXA1L, RER1 ALDH1A1 826/4885KDM4E 1890/4885MAPK1 1674/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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