SCHEMBL15037545

SCHEMBL15037545

COCc1ccc(COC)c2c(COC)ccc(COC)c12

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PRKCE Q02156 3/20 0.39
ALDH1A1 P00352 3/20 0.39
MYLK Q15746 2/20 0.39
TDP1 Q9NUW8 2/20 0.39
MAPT P10636 2/20 0.39
MEN1 O00255 1/20 0.39
PRKCG P05129 1/20 0.39
PRKCA P17252 1/20 0.39
APEX1 P27695 1/20 0.39
RECQL P46063 1/20 0.39
KMT2A Q03164 1/20 0.39
KDM4E B2RXH2 3/20 0.38
HTT P42858 2/20 0.38
NPC1 O15118 1/20 0.38
ALOX12 P18054 1/20 0.38
RAB9A P51151 1/20 0.38
NPSR1 Q6W5P4 1/20 0.38
LMNA P02545 1/20 0.35
TUBB4A P04350 1/20 0.34
TUBB P07437 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15033123 0.89 TDP1 (0.39) PRKCEALDH1A1MYLKTDP1MAPT
SCHEMBL15037547 0.89 KDM4E (0.38) PRKCEALDH1A1MYLKTDP1MAPT
SCHEMBL7778294 0.78 KDM4E (0.44) MAPTKDM4EL3MBTL1
SCHEMBL15033125 0.77 NPC1 (0.38) PRKCEALDH1A1MYLKTDP1MAPT
SCHEMBL648491 0.75 IDO1 (0.44) PRKCEALDH1A1MYLKTDP1MAPT
SCHEMBL18526169 0.75 PPARG (0.49) ALDH1A1TDP1MAPTMEN1RECQL
SCHEMBL11314967 0.75 KDM4E (0.52) PRKCEALDH1A1MYLKTDP1MAPT
SCHEMBL3356030 0.73 ALDH1A1 (0.48) PRKCEALDH1A1MYLKTDP1MAPT
SCHEMBL8256542 0.71 KDM4E (0.41) PRKCEALDH1A1MYLKTDP1MAPT
SCHEMBL11322968 0.71 ADRA1A (0.36) PRKCEALDH1A1MYLKTDP1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11320739-B2 Composition for resist underlayer film formation, resist underlayer film and method for producing patterned substrate JSR CORPORATION (JP) 2022-05-03 US disclosed
US-11243468-B2 Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method JSR CORPORATION (JP) 2022-02-08 US disclosed
US-11215928-B2 Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate JSR CORPORATION (JP) 2022-01-04 US disclosed
US-11126084-B2 Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound JSR CORPORATION (JP) 2021-09-21 US disclosed
US-11003079-B2 Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound JSR CORPORATION (JP) 2021-05-11 US disclosed
US-20190243247-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2019-08-08 US disclosed
US-20190212650-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND METHOD FOR FORMING THE SAME, AND PRODUCTION METHOD OF A PATTERNED SUBSTRATE JSR CORPORATION (JP) 2019-07-11 US disclosed
US-20190094695-A1 COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2019-03-28 US disclosed
US-9958781-B2 Method for film formation, and pattern-forming method JSR CORPORATION (JP) 2018-05-01 US disclosed
US-20180114698-A2 COMPOSITION FOR FILM FORMATION, FILM, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2018-04-26 US disclosed
US-20170137663-A9 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE JSR CORPORATION (JP) 2017-05-18 US disclosed
US-9620378-B1 Composition for film formation, film, production method of patterned substrate, and compound JSR CORPORATION (JP) 2017-04-11 US disclosed
US-20160314984-A1 METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-10-27 US disclosed
US-20160257842-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE JSR CORPORATION (JP) 2016-09-08 US disclosed
US-20160011512-A1 COMPOSITION, METHOD FOR PRODUCING PATTERNED SUBSTRATE, FILM AND FORMING METHOD THEREOF, AND COMPOUND JSR CORPORATION (JP) 2016-01-14 US disclosed
US-9091922-B2 Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method JSR CORPORATION (JP) 2015-07-28 US disclosed
US-20150198882-A9 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND RESIST UNDERLAYER FILM-FORMING METHOD, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-07-16 US disclosed
US-20140272722-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND RESIST UNDERLAYER FILM-FORMING METHOD, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-09-18 US disclosed
US-20140014620-A9 RESIN COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING METHOD AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-01-16 US disclosed
US-20130153535-A1 RESIN COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING METHOD AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-06-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20190094695-A1 COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND RER1, TOP1, RIF1 PRKCE 4384/4885ALDH1A1 1845/4885MYLK 1915/4885
US-11003079-B2 Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound RER1, TOP1, RIF1 PRKCE 4384/4885ALDH1A1 1845/4885MYLK 1915/4885
US-11126084-B2 Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound EMG1, FN1, TOP1 PRKCE 4187/4885ALDH1A1 849/4885MYLK 1131/4885
US-20190243247-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND EMG1, FN1, TOP1 PRKCE 4187/4885ALDH1A1 849/4885MYLK 1131/4885
US-20160011512-A1 COMPOSITION, METHOD FOR PRODUCING PATTERNED SUBSTRATE, FILM AND FORMING METHOD THEREOF, AND COMPOUND PKN2, FOXK1, SPIN1 PRKCE 4264/4885ALDH1A1 1624/4885MYLK 1514/4885
US-11215928-B2 Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate TOP1, OXA1L, RER1 PRKCE 4590/4885ALDH1A1 826/4885MYLK 2081/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.