SCHEMBL15037547

SCHEMBL15037547

COCc1ccc2c3ccc(COC)c4c(COC)ccc(c5ccc(COC)c1c25)c43

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.38
NPC1 O15118 1/20 0.38
ALOX12 P18054 1/20 0.38
HTT P42858 1/20 0.38
RAB9A P51151 1/20 0.38
NPSR1 Q6W5P4 1/20 0.38
HSD17B3 P37058 1/20 0.37
PRKCE Q02156 2/20 0.34
MYLK Q15746 2/20 0.34
MEN1 O00255 1/20 0.34
ALDH1A1 P00352 1/20 0.34
PRKCG P05129 1/20 0.34
MAPT P10636 1/20 0.34
PRKCA P17252 1/20 0.34
APEX1 P27695 1/20 0.34
RECQL P46063 1/20 0.34
KMT2A Q03164 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
TYMS P04818 1/20 0.34
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15037545 0.89 PRKCE (0.39) KDM4ENPC1ALOX12HTTRAB9A
SCHEMBL15033125 0.86 NPC1 (0.38) KDM4ENPC1ALOX12HTTRAB9A
SCHEMBL15033123 0.80 TDP1 (0.39) KDM4ENPC1ALOX12HTTRAB9A
SCHEMBL11314967 0.72 KDM4E (0.52) KDM4ENPC1ALOX12HTTRAB9A
SCHEMBL7778294 0.70 KDM4E (0.44) KDM4EMAPT
SCHEMBL9815022 0.70 ALDH1A1 (0.48) KDM4ENPC1ALOX12HTTRAB9A
SCHEMBL648491 0.67 IDO1 (0.44) KDM4ENPC1ALOX12HTTRAB9A
SCHEMBL18526169 0.67 PPARG (0.49) KDM4EHTTNPSR1MEN1ALDH1A1
SCHEMBL11307318 0.67 KDM4E (0.47) KDM4ENPC1ALOX12HTTRAB9A
SCHEMBL3356030 0.66 ALDH1A1 (0.48) KDM4ENPC1ALOX12HTTRAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11320739-B2 Composition for resist underlayer film formation, resist underlayer film and method for producing patterned substrate JSR CORPORATION (JP) 2022-05-03 US disclosed
US-11243468-B2 Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method JSR CORPORATION (JP) 2022-02-08 US disclosed
US-11215928-B2 Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate JSR CORPORATION (JP) 2022-01-04 US disclosed
US-11126084-B2 Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound JSR CORPORATION (JP) 2021-09-21 US disclosed
US-11003079-B2 Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound JSR CORPORATION (JP) 2021-05-11 US disclosed
US-20190243247-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2019-08-08 US disclosed
US-20190212650-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND METHOD FOR FORMING THE SAME, AND PRODUCTION METHOD OF A PATTERNED SUBSTRATE JSR CORPORATION (JP) 2019-07-11 US disclosed
US-20190094695-A1 COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2019-03-28 US disclosed
US-9958781-B2 Method for film formation, and pattern-forming method JSR CORPORATION (JP) 2018-05-01 US disclosed
US-20180114698-A2 COMPOSITION FOR FILM FORMATION, FILM, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND JSR CORPORATION (JP) 2018-04-26 US disclosed
US-20170137663-A9 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE JSR CORPORATION (JP) 2017-05-18 US disclosed
US-9620378-B1 Composition for film formation, film, production method of patterned substrate, and compound JSR CORPORATION (JP) 2017-04-11 US disclosed
US-20160314984-A1 METHOD FOR FILM FORMATION, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-10-27 US disclosed
US-20160257842-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE JSR CORPORATION (JP) 2016-09-08 US disclosed
US-20160011512-A1 COMPOSITION, METHOD FOR PRODUCING PATTERNED SUBSTRATE, FILM AND FORMING METHOD THEREOF, AND COMPOUND JSR CORPORATION (JP) 2016-01-14 US disclosed
US-9091922-B2 Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method JSR CORPORATION (JP) 2015-07-28 US disclosed
US-20150198882-A9 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND RESIST UNDERLAYER FILM-FORMING METHOD, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-07-16 US disclosed
US-20140272722-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND RESIST UNDERLAYER FILM-FORMING METHOD, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-09-18 US disclosed
US-20140014620-A9 RESIN COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING METHOD AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-01-16 US disclosed
US-20130153535-A1 RESIN COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING METHOD AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-06-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20190094695-A1 COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND RER1, TOP1, RIF1 KDM4E 1066/4885NPC1 943/4885ALOX12 2546/4885
US-11003079-B2 Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound RER1, TOP1, RIF1 KDM4E 1066/4885NPC1 943/4885ALOX12 2546/4885
US-11126084-B2 Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound EMG1, FN1, TOP1 KDM4E 423/4885NPC1 1115/4885ALOX12 933/4885
US-20190243247-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND EMG1, FN1, TOP1 KDM4E 423/4885NPC1 1115/4885ALOX12 933/4885
US-20160011512-A1 COMPOSITION, METHOD FOR PRODUCING PATTERNED SUBSTRATE, FILM AND FORMING METHOD THEREOF, AND COMPOUND PKN2, FOXK1, SPIN1 KDM4E 712/4885NPC1 1114/4885ALOX12 2944/4885
US-11215928-B2 Composition for resist underlayer film formation, resist underlayer film and method for forming the same, and production method of a patterned substrate TOP1, OXA1L, RER1 KDM4E 1890/4885NPC1 2205/4885ALOX12 1408/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.