SCHEMBL15613908

SCHEMBL15613908

CCC(CC)(CC)OC(=O)NCCCC(=O)O

nearest known ligand 0.46

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
▸ PRMT1 Q99873 1/20 0.46
▸ HTT P42858 1/20 0.44
▸ MEN1 O00255 1/20 0.44
▸ GAA P10253 1/20 0.44
▸ KMT2A Q03164 1/20 0.44
▸ PLA2G4A P47712 1/20 0.44
▸ ADRA1A P35348 1/20 0.43
▸ TDP1 Q9NUW8 1/20 0.42
▸ EPHX2 P34913 9/20 0.41
▸ PLA2G2A P14555 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15613901 0.84 MEN1 (0.46) PRMT1HTTMEN1GAAKMT2A
SCHEMBL15613902 0.84 MEN1 (0.46) PRMT1HTTMEN1GAAKMT2A
SCHEMBL238415 0.81 MEN1 (0.64) PRMT1HTTMEN1GAAKMT2A
SCHEMBL15613918 0.81 ALDH1A1 (0.46) GAAEPHX2
SCHEMBL28063880 0.80 MEN1 (0.62) PRMT1HTTMEN1GAAKMT2A
SCHEMBL15613938 0.79 ADRA1A (0.49) PRMT1MEN1GAAKMT2APLA2G4A
SCHEMBL15613928 0.78 ADRA1A (0.51) PRMT1MEN1GAAKMT2APLA2G4A
SCHEMBL14838226 0.77 TDP1 (0.41) MEN1GAAKMT2ATDP1
SCHEMBL628018 0.77 EPHX1 (0.57) PRMT1HTTPLA2G4AADRA1AEPHX2
SCHEMBL904074 0.76 TDP1 (0.66) PRMT1MEN1GAAKMT2AADRA1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9250518-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 — — US disclosed
US-9250518-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 — — US disclosed
US-20150125794-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-07 — — US disclosed
US-20150125794-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-07 — — US disclosed
US-9017922-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-04-28 — — US disclosed
US-9017922-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-04-28 — — US disclosed
US-20140080055-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 — — US disclosed
US-20140080055-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 — — US disclosed
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