SCHEMBL1656348

SCHEMBL1656348

O=S(=O)([O-])C(F)(F)C(F)(F)CCO.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.32

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
PTPN1 P18031 1/20 0.32
GPR3 P46089 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30184989 0.93 HSD11B1 (0.33)
SCHEMBL1772468 0.90 ESR2 (0.32) PTPN1
SCHEMBL1484122 0.88 PTPN1 (0.33) PTPN1GPR3
SCHEMBL29745863 0.82 GPR3 (0.40) PTPN1GPR3
SCHEMBL1656674 0.80 TDP1 (0.44)
SCHEMBL546819 0.79 GPR3 (0.42) PTPN1GPR3
SCHEMBL2436314 0.79 GPR3 (0.38) PTPN1GPR3
SCHEMBL217003 0.79 GPR3 (0.38) PTPN1GPR3
SCHEMBL1929854 0.78
SCHEMBL4268815 0.78 KMT2A (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10670965-B2 Polymers and photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-06-02 US disclosed
US-9488914-B2 Fluorine-containing sulfonic acid salt, fluorine-containing sulfonic acid salt resin, resist composition, and pattern forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2016-11-08 US disclosed
US-9221928-B2 Fluorine-containing sulfonate resin, fluorine-containing N-sulfonyloxyimide resin, resist composition and pattern formation method CENTRAL GLASS COMPANY, LIMITED (JP) 2015-12-29 US disclosed
US-9182664-B2 Polymerizable fluorine-containing sulfonate, fluorine-containing sulfonate resin, resist composition and pattern-forming method using same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-11-10 US disclosed
US-20150198879-A1 Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-07-16 US disclosed
US-9067909-B2 Photoacid generator, photoresist, coated substrate, and method of forming an electronic device ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-06-30 US disclosed
US-8993212-B2 Fluorine-containing sulfonic acid salts, photo-acid generator and resist composition and pattern formation method utilizing same CENTRAL GLASS COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-20150064620-A1 PHOTOACID GENERATOR, PHOTORESIST, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-03-05 US disclosed
US-20130209938-A1 Fluorine-Containing Sulfonic Acid Salts, Photo-Acid Generator And Resist Composition And Pattern Formation Method Utilizing Same CENTRAL GLASS COMPANY, LTD. (JP) 2013-08-15 US disclosed
US-20130209937-A1 Polymerizable Fluorine-Containing Sulfonate, Fluorine-Containing Sulfonate Resin, Resist Composition And Pattern-Forming Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2013-08-15 US disclosed
US-20120328985-A1 Fluorine-Containing Sulfonate Resin, Fluorine-Containing N-Sulfonyloxyimide Resin, Resist Composition and Pattern Formation Method CENTRAL GLASS COMPANY, LIMITED (JP) 2012-12-27 US disclosed
US-20110269074-A1 NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-11-03 US disclosed
EP-2372456-A2 Novel polymers and photoresist compositions Rohm and Haas Electronic Materials LLC (US) 2011-10-05 EP disclosed
US-8030515-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-30 US disclosed
US-7956142-B2 Polymerizable sulfonic acid onium salt and resin JSR CORPORATION (JP) 2011-06-07 US disclosed
US-7928262-B2 Onium salts, oxime sulfonates and sulfonyloxyimides derived from these sulfonium salts are effective photoacid generators in chemically amplified resist compositions; sensitive to high-energy radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-19 US disclosed
US-20100063232-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN JSR CORPORATION (JP) 2010-03-11 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100063232-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN ASIC1, RER1, RPS10 PTPN1 2089/4885GPR3 2800/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST PTPN1 1964/4885GPR3 1780/4885
US-20120328985-A1 Fluorine-Containing Sulfonate Resin, Fluorine-Containing N-Sulfonyloxyimide Resin, Resist Composition and Pattern Formation Method RTRAF, EIF3F, RER1 PTPN1 1097/4885GPR3 2434/4885
US-20150198879-A1 Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same RER1, SMARCC1, SMCHD1 PTPN1 435/4885GPR3 2239/4885
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST PTPN1 1964/4885GPR3 1780/4885
US-20150064620-A1 PHOTOACID GENERATOR, PHOTORESIST, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE C1R, GLRA1, GLRA2 PTPN1 3164/4885GPR3 149/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.