Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL935442 | 0.86 | ALDH1A1 (0.30) | ALDH1A1 | |
| SCHEMBL11657157 | 0.80 | — | — | |
| SCHEMBL11868439 | 0.80 | — | — | |
| SCHEMBL4538711 | 0.80 | — | — | |
| SCHEMBL23645970 | 0.68 | ALDH1A1 (0.42) | ALDH1A1 | |
| SCHEMBL11992339 | 0.68 | ALDH1A1 (0.42) | ALDH1A1 | |
| SCHEMBL7465105 | 0.68 | — | — | |
| SCHEMBL8423403 | 0.68 | ALDH1A1 (0.42) | ALDH1A1 | |
| SCHEMBL72016 | 0.68 | — | — | |
| SCHEMBL866496 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1455 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260130139-A1 | LOW TEMPERATURE SI-CONTAINING FILMS DEPOSITED FROM CHLOROSILANE AND AMINOSILANE REACTIONS | VERSUM MAT US LLC (US) | 2026-05-07 | — | — | US | claimed |
| US-12604684-B2 | Method and system for mitigating underlayer damage during formation of patterned structures | ASM IP HOLDING B.V. (NL) | 2026-04-14 | — | — | US | claimed |
| US-12543516-B2 | Methods of forming silicon germanium structures | ASM IP HOLDING B.V. (NL) | 2026-02-03 | — | — | US | claimed |
| US-20250389025-A1 | METHOD OF FORMING A LAYER BY ALD | ASM IP HOLDING BV (NL) | 2025-12-25 | — | — | US | claimed |
| WO-2025226985-A1 | PASSIVATION OF POLYSILICON MATERIAL AND SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL UTILIZING ALKYNES | VERSUM MATERIALS US, LLC (US) | 2025-10-30 | — | — | WO | claimed |
| US-20250313953-A1 | METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS | ASM IP HOLDING B.V. (NL) | 2025-10-09 | — | — | US | claimed |
| US-20250308886-A1 | GAP FILLING BY ATOMIC LAYER DEPOSITION (ALD) | TOKYO ELECTRON LIMITED (JP) | 2025-10-02 | — | — | US | claimed |
| US-12431354-B2 | Silicon nitride and silicon oxide deposition methods using fluorine inhibitor | ASM IP HOLDING B.V. (NL) | 2025-09-30 | — | — | US | claimed |
| US-12378667-B2 | Methods and systems for forming doped silicon nitride films | ASM IP HOLDING B.V. (NL) | 2025-08-05 | — | — | US | claimed |
| CN-120077763-A | Low Wen Gongliu epitaxial deposition process | 应用材料公司 | 2025-05-30 | — | — | CN | claimed |
| US-20130294995-A1 | SELECTIVE SPLITTING OF HIGH ORDER SILANES | EVONIK DEGUSSA GMBH (DE) | 2013-11-07 | — | — | US | claimed |
| US-20130109197-A1 | METHOD OF FORMING SILICON OXIDE FILM | TOKYO ELECTRON LIMITED (JP) | 2013-05-02 | — | — | US | claimed |
| US-20100080746-A1 | METHOD FOR PRODUCING HIGHER SILANES | EVONIK DEGUSSA GMBH (DE) | 2010-04-01 | — | — | US | claimed |
| US-7510935-B2 | Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-03-31 | — | — | US | claimed |
| EP-2030227-A2 | METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES | ASM America, Inc. (US) | 2009-03-04 | — | — | EP | claimed |
| US-20080026149-A1 | METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES | ASM AMERICA, INC. (US) | 2008-01-31 | — | — | US | claimed |
| WO-2007140375-A2 | METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES | ASM AMERICA, INC. (US) | 2007-12-06 | — | — | WO | claimed |
| US-20070063255-A1 | Non-volatile memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. | 2007-03-22 | — | — | US | claimed |
| US-20070048957-A1 | METHOD OF MANUFACTURING A CHARGE-TRAPPING DIELECTRIC AND METHOD OF MANUFACTURING A SONOS-TYPE NON-VOLATILE SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-03-01 | — | — | US | claimed |
| US-6846473-B2 | Process for producing hexachlorodisilane | MITSUBISHI MATERIALS POLYCRYSTALLINE SILICON CORPORATION (JP) | 2005-01-25 | — | — | US | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260130139-A1 | LOW TEMPERATURE SI-CONTAINING FILMS DEPOSITED FROM CHLOROSILANE AND AMINOSILANE REACTIONS | AS3MT, SIK1, ADH1A | ALDH1A1 221/4885 |
| US-12543516-B2 | Methods of forming silicon germanium structures | SGMS2, SGMS1, SAMM50 | ALDH1A1 4782/4885 |
| US-20250389025-A1 | METHOD OF FORMING A LAYER BY ALD | RICTOR, FOXO3, MTOR | ALDH1A1 187/4885 |
| US-12604684-B2 | Method and system for mitigating underlayer damage during formation of patterned structures | MRE11, SPOP, OGG1 | ALDH1A1 4568/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.