Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.56 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.56 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.42 |
| ▸ | CYP19A1 | P11511 | 3/20 | 0.37 |
| ▸ | CYP17A1 | P05093 | 2/20 | 0.37 |
| ▸ | NAAA | Q02083 | 1/20 | 0.35 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.31 |
| ▸ | CKS1B | P61024 | 1/20 | 0.31 |
| ▸ | SKP1 | P63208 | 1/20 | 0.31 |
| ▸ | SKP2 | Q13309 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12705217 | 0.88 | TSHR (0.53) | TSHRNPSR1EPHX2CYP19A1CYP17A1 | |
| SCHEMBL12705402 | 0.86 | TSHR (0.59) | TSHRNPSR1EPHX2CYP19A1CYP17A1 | |
| SCHEMBL12705412 | 0.85 | TSHR (0.49) | TSHRNPSR1EPHX2CYP19A1CYP17A1 | |
| SCHEMBL12256168 | 0.84 | CYP19A1 (0.43) | TSHRNPSR1EPHX2CYP19A1CYP17A1 | |
| SCHEMBL18844234 | 0.82 | TSHR (0.40) | TSHRNPSR1CYP19A1CYP17A1NAAA | |
| SCHEMBL11991220 | 0.81 | TSHR (0.50) | TSHRNPSR1EPHX2CYP19A1CYP17A1 | |
| SCHEMBL12705221 | 0.81 | TSHR (0.50) | TSHRNPSR1EPHX2CYP19A1CYP17A1 | |
| SCHEMBL12705408 | 0.80 | TSHR (0.47) | TSHRNPSR1EPHX2CYP19A1CYP17A1 | |
| SCHEMBL14019740 | 0.80 | TSHR (0.63) | TSHRNPSR1EPHX2CYP19A1CYP17A1 | |
| SCHEMBL12430198 | 0.79 | NPSR1 (0.51) | TSHRNPSR1EPHX2CYP19A1CYP17A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 88 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9996002-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-06-12 | — | — | US | disclosed |
| US-9983478-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-05-29 | — | — | US | disclosed |
| US-9971241-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20180113382-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-04-26 | — | — | US | disclosed |
| US-9951159-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-04-24 | — | — | US | disclosed |
| US-9880466-B2 | Salt, acid generator, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-01-30 | — | — | US | disclosed |
| US-9869929-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9869930-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9857683-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-01-02 | — | — | US | disclosed |
| US-9822060-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-11-21 | — | — | US | disclosed |
| US-20120214100-A1 | RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-23 | — | — | US | disclosed |
| US-20120122032-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-05-17 | — | — | US | disclosed |
| US-20120088190-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-04-12 | — | — | US | disclosed |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-09-22 | — | — | US | disclosed |
| US-20110171586-A1 | RESIST PROCESSING METHOD | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-07-14 | — | — | US | disclosed |
| US-20110165521-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-07-07 | — | — | US | disclosed |
| US-20110091808-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-04-21 | — | — | US | disclosed |
| US-20110014568-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20100279226-A1 | RESIST PROCESSING METHOD | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-11-04 | — | — | US | disclosed |
| US-20100009288-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2010-01-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180113382-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | RER1, FRG1, C1R | TSHR 402/4885NPSR1 220/4885EPHX2 871/4885 |
| US-20110091808-A1 | PHOTORESIST COMPOSITION | ASIC1, ASIC3, SUN2 | TSHR 4266/4885NPSR1 1095/4885EPHX2 1389/4885 |
| US-20110014568-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | RER1, REN, SSB | TSHR 753/4885NPSR1 1008/4885EPHX2 3951/4885 |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | RER1, RARA, RARG | TSHR 2489/4885NPSR1 1716/4885EPHX2 313/4885 |
| US-20120122032-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | RER1, RCOR1, PNISR | TSHR 516/4885NPSR1 13/4885EPHX2 3919/4885 |
| US-20120088190-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | AFF1, FGFR1, FRG1 | TSHR 834/4885NPSR1 1149/4885EPHX2 2881/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.