SCHEMBL172075

SCHEMBL172075

C=C(C)C(=O)OC1CCCC1=O

nearest known ligand 0.43

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.43
HSD17B10 Q99714 1/20 0.43
MAPT P10636 1/20 0.43
ALDH1A1 P00352 5/20 0.41
POLB P06746 2/20 0.41
USP2 O75604 1/20 0.41
LMNA P02545 1/20 0.41
PKM P14618 2/20 0.35
PTGS1 P23219 1/20 0.35
PTGS2 P35354 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
KMT2A Q03164 2/20 0.34
MEN1 O00255 1/20 0.34
MAPK1 P28482 1/20 0.33
ATM Q13315 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5489568 0.95 KDM4E (0.49) KDM4EHSD17B10MAPTALDH1A1POLB
SCHEMBL17679424 0.85 MAPT (0.44) KDM4EHSD17B10MAPTALDH1A1POLB
SCHEMBL17247972 0.83 KDM4E (0.38) KDM4EHSD17B10MAPTALDH1A1POLB
SCHEMBL15850903 0.82 ALDH1A1 (0.34) ALDH1A1USP2LMNAKMT2AATM
SCHEMBL3830715 0.81 MAPT (0.47) KDM4EHSD17B10MAPTALDH1A1POLB
SCHEMBL15850922 0.81 ALDH1A1 (0.33) ALDH1A1
SCHEMBL15850963 0.79 KDM4E (0.33) KDM4EHSD17B10MAPTALDH1A1POLB
SCHEMBL15083621 0.77 KDM4E (0.34) KDM4EHSD17B10MAPTALDH1A1POLB
SCHEMBL1899739 0.76 MAPK1 (0.41) KDM4EHSD17B10ALDH1A1POLBSMN1; SMN2
SCHEMBL15850973 0.76 KDM4E (0.33) KDM4EHSD17B10MAPTALDH1A1POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 200 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-121318718-A Preparation method of methyl ester of exo-8-oxo bicyclo [3.2.1] octane-3-carboxylate 江阴迈康升华医药科技有限公司 2026-01-13 CN disclosed
US-11822248-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2023-11-21 US disclosed
US-11762292-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2023-09-19 US disclosed
US-10042251-B2 Zwitterionic photo-destroyable quenchers ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-08-07 US disclosed
US-10025181-B2 Polymer composition and photoresist comprising same DOW GLOBAL TECHNOLOGIES LLC (US) 2018-07-17 US disclosed
US-10012903-B2 Resist composition and pattern forming process SHIN-ESTU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-20180095367-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-04-05 US disclosed
US-20180095364-A1 ZWITTERIONIC PHOTO-DESTROYABLE QUENCHERS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2018-04-05 US disclosed
US-20180052390-A1 ONIUM COMPOUNDS AND METHODS OF SYNTHESIS THEREOF ROHM AND HAAS ELECTRONIC MATERIALS LLC 2018-02-22 US disclosed
US-20180024435-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-25 US disclosed
US-20120220112-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120183904-A1 NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-20120183904-A1 NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
EP-2426154-A1 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition Fujifilm Corporation (JP) 2012-03-07 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180095364-A1 ZWITTERIONIC PHOTO-DESTROYABLE QUENCHERS CRY1, CRY2, UNG KDM4E 1388/4885HSD17B10 4407/4885MAPT 1956/4885
US-10042251-B2 Zwitterionic photo-destroyable quenchers CRY1, CRY2, UNG KDM4E 1388/4885HSD17B10 4407/4885MAPT 1956/4885
US-20180052390-A1 ONIUM COMPOUNDS AND METHODS OF SYNTHESIS THEREOF NISCH, TST, SCLY KDM4E 1890/4885HSD17B10 1794/4885MAPT 1997/4885
US-20120183904-A1 NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS PARG, PCNA, PAM KDM4E 1141/4885HSD17B10 3355/4885MAPT 2949/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.