Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALOX15 | P16050 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.34 |
| ▸ | CHRM5 | P08912 | 2/20 | 0.33 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.33 |
| ▸ | CHRM3 | P20309 | 2/20 | 0.33 |
| ▸ | PGR | P06401 | 1/20 | 0.33 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.33 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.33 |
| ▸ | HTR1A | P08908 | 1/20 | 0.33 |
| ▸ | CHRNB2 | P17787 | 1/20 | 0.33 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.33 |
| ▸ | CHRNB4 | P30926 | 1/20 | 0.33 |
| ▸ | CHRNA3 | P32297 | 1/20 | 0.33 |
| ▸ | CHRNA7 | P36544 | 1/20 | 0.33 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | CHRNA10 | Q9GZZ6 | 1/20 | 0.33 |
| ▸ | CHRNA9 | Q9UGM1 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | GALR3 | O60755 | 2/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL26488812 | 0.87 | — | — | |
| SCHEMBL2742237 | 0.84 | THRB (0.40) | ALDH1A1TSHRHTTTDP1 | |
| SCHEMBL13828909 | 0.83 | PRKCA (0.33) | GAA | |
| SCHEMBL26059452 | 0.83 | ALOX15 (0.40) | ALOX15ALDH1A1CHRM5CHRM1CHRM3 | |
| SCHEMBL12257081 | 0.82 | TDP1 (0.39) | ALDH1A1GAAL3MBTL1LMNAHSD17B10 | |
| SCHEMBL19954368 | 0.81 | — | — | |
| SCHEMBL12157345 | 0.81 | — | — | |
| SCHEMBL6366939 | 0.80 | — | — | |
| SCHEMBL12040245 | 0.80 | HMGCR (0.30) | — | |
| SCHEMBL13048511 | 0.79 | TSHR (0.42) | ALDH1A1SMN1; SMN2TSHRHSD17B10 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230161254-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161254-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230134822-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230132653-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230132653-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20190204739-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2019-07-04 | — | — | US | disclosed |
| US-20170097565-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-04-06 | — | — | US | disclosed |
| US-20160334706-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-17 | — | — | US | disclosed |
| US-20160195814-A1 | PATTERN FORMATION METHOD, ELECTRONIC-DEVICE PRODUCTION METHOD, AND PROCESSING AGENT | FUJIFILM CORPORATION (JP) | 2016-07-07 | — | — | US | disclosed |
| US-20160070174-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-03-10 | — | — | US | disclosed |
| US-20160033862-A1 | ACTIVE LIGHT-SENSITIVE, OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2016-02-04 | — | — | US | disclosed |
| US-20160033862-A1 | ACTIVE LIGHT-SENSITIVE, OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2016-02-04 | — | — | US | disclosed |
| US-9250519-B2 | Pattern forming method and actinic ray-sensitive or radiation-sensitive resin composition for use in the method | FUJIFILM CORPORATION (JP) | 2016-02-02 | — | — | US | disclosed |
| US-20150111135-A1 | PATTERN FORMING METHOD AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2015-04-23 | — | — | US | disclosed |
| US-20130136900-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-05-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20190204739-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | RB1, NR3C2, NR3C1 | ALOX15 1208/4885ALDH1A1 2809/4885CHRM5 2718/4885 |
| US-20230134822-A1 | AMINE COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | GFER, GNMT, DNER | ALOX15 70/4885ALDH1A1 3192/4885CHRM5 2773/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | ALOX15 1831/4885ALDH1A1 1459/4885CHRM5 4096/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.