Iodide

Iodide

SCHEMBL1760783

I.O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.54

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHECHRM1CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNG

The experimentally established mechanism targets of Iodide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
▸ CA2 P00918 13/20 0.54
▸ CA1 P00915 12/20 0.54
▸ MMP1 P03956 6/20 0.54
▸ MMP2 P08253 6/20 0.54
▸ MMP9 P14780 6/20 0.54
▸ MMP8 P22894 6/20 0.54
▸ MMP13 P45452 6/20 0.54
▸ F2 P00734 4/20 0.48
▸ PRSS1 P07477 4/20 0.48
▸ PRSS2 P07478 4/20 0.48
▸ PRSS3 P35030 4/20 0.48
▸ THRB P10828 1/20 0.39
▸ ALDH1A1 P00352 1/20 0.35
▸ L3MBTL1 Q9Y468 1/20 0.35
▸ LMNA P02545 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL715861 0.97 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL6396145 0.97 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL3141146 0.97 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL3129686 0.97 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL466749 0.97 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL716738 0.97 CA2 (0.56) CA2CA1MMP1MMP2MMP9
Iodide SCHEMBL4606067 0.97 CA2 (0.52) CA2CA1MMP1MMP2MMP9
SCHEMBL561335 0.97 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL715939 0.97 CA2 (0.56) CA2CA1MMP1MMP2MMP9
SCHEMBL3135152 0.97 CA2 (0.56) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 353 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260104643-A1 METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-04-16 — — US claimed
US-12535739-B2 Method of forming photoresist pattern TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-01-27 — — US claimed
US-20240077802-A1 METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2024-03-07 — — US claimed
US-11626293-B2 Method of manufacturing a semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-04-11 — — US claimed
US-20220230889-A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2022-07-21 — — US claimed
US-6610456-B2 Such as 4-(hexafluorohydroxyisopropyl)styrene copolymer with tert-butyl alpha-trifluoromethyl acrylate; transparent to deep ultraviolet (DUV) radiation INTERNATIONAL BUSINESS MACHINES CORPORATION 2003-08-26 — — US claimed
US-20020164538-A1 Fluorine-containing styrene acrylate copolymers and use thereof in lithographic photoresist compositions INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-11-07 — — US claimed
US-20260150633-A1 UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-05-28 — — US disclosed
US-12638775-B2 Methods and compositions for improved patterning of photoresist TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2026-05-26 — — US disclosed
US-20260140444-A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-05-21 — — US disclosed
CN-122028714-A Method for manufacturing semiconductor device and composition for coating patterned photoresist 台湾积体电路制造股份有限公司 2026-05-12 — — CN disclosed
US-20260130180-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WAFER PROTECTIVE COMPOSITION TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-05-07 — — US disclosed
US-12619148-B2 Crosslinkable photoresist for extreme ultraviolet lithography TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2026-05-05 — — US disclosed
US-20070026339-A1 NEGATIVE RESISTS BASED ON A ACID-CATALYZED ELIMINATION OF POLAR MOLECULES GLOBALFOUNDRIES U.S. INC. 2007-02-01 — — US disclosed
US-20060287558-A1 The monomer: 3-Hydroxy-3,3-bis(trifluoromethyl)-2-methylpropyl vinyl ether; for preparing chemical amplification resists that are transparent to deep ultraviolet radiation used in the manufacture of integrated circuits INTERNATIONAL BUSINESS MACHINES (US) 2006-12-21 — — US disclosed
US-7150957-B2 Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-12-19 — — US disclosed
US-20060275701-A1 Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions INTERNATIONAL BUSINESS MACHINES (US) 2006-12-07 — — US disclosed
US-20040214102-A1 Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions GLOBALFOUNDRIES U.S. INC. 2004-10-28 — — US disclosed
US-6610456-B2 Such as 4-(hexafluorohydroxyisopropyl)styrene copolymer with tert-butyl alpha-trifluoromethyl acrylate; transparent to deep ultraviolet (DUV) radiation INTERNATIONAL BUSINESS MACHINES CORPORATION 2003-08-26 — — US disclosed
US-20020164538-A1 Fluorine-containing styrene acrylate copolymers and use thereof in lithographic photoresist compositions INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-11-07 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260140444-A1 PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INO80C, INO80, NAT10 CA2 2393/4885CA1 1124/4885MMP1 431/4885
US-12535739-B2 Method of forming photoresist pattern DSTN, PFAS, FASN CA2 4072/4885CA1 2898/4885MMP1 4086/4885
US-20260150633-A1 UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE ATM, SRMS, PARG CA2 3673/4885CA1 3493/4885MMP1 3156/4885
US-12619148-B2 Crosslinkable photoresist for extreme ultraviolet lithography LBR, ARCN1, ERCC1 CA2 492/4885CA1 458/4885MMP1 1351/4885
US-20260130180-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WAFER PROTECTIVE COMPOSITION C9, C1S, ZKSCAN2 CA2 1510/4885CA1 19/4885MMP1 2244/4885
US-12638775-B2 Methods and compositions for improved patterning of photoresist DSG1, SCO2, ERCC1 CA2 100/4885CA1 57/4885MMP1 1211/4885
US-20060287558-A1 The monomer: 3-Hydroxy-3,3-bis(trifluoromethyl)-2-methylpropyl vinyl ether; for preparing chemical amplification resists that are transparent to deep ultraviolet radiation used in the manufacture of integrated circuits ETV6, RUVBL1, FGR CA2 4204/4885CA1 4326/4885MMP1 4645/4885
US-20260104643-A1 METHOD OF FORMING PHOTORESIST PATTERN DSTN, PFAS, DNTT CA2 3477/4885CA1 2276/4885MMP1 4496/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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