Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 4/20 | 0.66 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.66 |
| ▸ | CA1 | P00915 | 3/20 | 0.59 |
| ▸ | CA2 | P00918 | 3/20 | 0.59 |
| ▸ | TP53 | P04637 | 2/20 | 0.59 |
| ▸ | TSHR | P16473 | 1/20 | 0.59 |
| ▸ | EGFR | P00533 | 1/20 | 0.59 |
| ▸ | PIM1 | P11309 | 1/20 | 0.59 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.57 |
| ▸ | MAPT | P10636 | 3/20 | 0.57 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.57 |
| ▸ | LMNA | P02545 | 1/20 | 0.57 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.57 |
| ▸ | HPGD | P15428 | 1/20 | 0.57 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.57 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.57 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.57 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.57 |
| ▸ | P4HB | P07237 | 1/20 | 0.49 |
| ▸ | PGR | P06401 | 1/20 | 0.49 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29378094 | 1.00 | MEN1 (0.66) | MEN1KMT2ACA1CA2TP53 | |
| SCHEMBL28986013 | 0.94 | MEN1 (0.62) | MEN1KMT2ACA1CA2TP53 | |
| SCHEMBL11021178 | 0.92 | MEN1 (0.66) | MEN1KMT2ACA1CA2TP53 | |
| SCHEMBL18231622 | 0.87 | MEN1 (0.60) | MEN1KMT2ACA1CA2TP53 | |
| SCHEMBL27632073 | 0.86 | MEN1 (0.62) | MEN1KMT2ACA1CA2TP53 | |
| SCHEMBL27014029 | 0.85 | MEN1 (0.54) | MEN1KMT2ACA1CA2TP53 | |
| SCHEMBL11022631 | 0.83 | TP53 (0.67) | MEN1KMT2ACA1CA2TP53 | |
| SCHEMBL4398788 | 0.81 | TP53 (0.67) | MEN1KMT2ACA1CA2TP53 | |
| SCHEMBL5433427 | 0.80 | CA1 (0.59) | MEN1KMT2ACA1CA2TP53 | |
| SCHEMBL16463698 | 0.79 | NPC1 (0.51) | MEN1KMT2ACA1CA2TP53 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11130724-B2 | Compound, resin, composition, resist pattern formation method, and circuit pattern formation method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-09-28 | — | — | US | disclosed |
| US-11067889-B2 | Compound, composition, and method for producing same, underlayer film forming material for lithography, composition for underlayer film formation for lithography, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-07-20 | — | — | US | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| US-20210047457-A1 | COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-02-18 | — | — | US | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| EP-3744710-A1 | COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-02 | — | — | EP | disclosed |
| CN-111615507-A | Compound, resin, composition, and pattern forming method | 三菱瓦斯化学株式会社 | 2020-09-01 | — | — | CN | disclosed |
| US-10642156-B2 | Resist base material, resist composition and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-05-05 | — | — | US | disclosed |
| EP-3012274-B1 | AROMATIC HYDROCARBON FORMALDEHYDE RESIN, MODIFIED AROMATIC HYDROCARBON FORMALDEHYDE RESIN, AND EPOXY RESIN, AND METHOD FOR PRODUCING SAID RESINS | MITSUBISHI GAS CHEMICAL CO (JP) | 2019-10-23 | — | — | EP | disclosed |
| EP-3279730-A1 | RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND RESIST PATTERN-FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279728-A1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| US-9725551-B2 | Aromatic hydrocarbon formaldehyde resin, modified aromatic hydrocarbon formaldehyde resin and epoxy resin, and method for producing these | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-08-08 | — | — | US | disclosed |
| US-20170075220-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-03-16 | — | — | US | disclosed |
| US-9562130-B2 | Aromatic hydrocarbon formaldehyde resin, modified aromatic hydrocarbon formaldehyde resin and epoxy resin, and methods for producing these | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-02-07 | — | — | US | disclosed |
| EP-3118684-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2017-01-18 | — | — | EP | disclosed |
| US-20160130383-A1 | AROMATIC HYDROCARBON FORMALDEHYDE RESIN, MODIFIED AROMATIC HYDROCARBON FORMALDEHYDE RESIN, AND EPOXY RESIN, AND METHOD FOR PRODUCING THESE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160130384-A1 | AROMATIC HYDROCARBON FORMALDEHYDE RESIN, MODIFIED AROMATIC HYDROCARBON FORMALDEHYDE RESIN AND EPOXY RESIN, AND METHODS FOR PRODUCING THESE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-05-12 | — | — | US | disclosed |
| EP-3012275-A1 | AROMATIC HYDROCARBON FORMALDEHYDE RESIN, MODIFIED AROMATIC HYDROCARBON FORMALDEHYDE RESIN, AND EPOXY RESIN, AND METHOD FOR PRODUCING SAID RESINS | Mitsubishi Gas Chemical Company, Inc. (JP) | 2016-04-27 | — | — | EP | disclosed |
| EP-3012274-A1 | AROMATIC HYDROCARBON FORMALDEHYDE RESIN, MODIFIED AROMATIC HYDROCARBON FORMALDEHYDE RESIN, AND EPOXY RESIN, AND METHOD FOR PRODUCING SAID RESINS | Mitsubishi Gas Chemical Company, Inc. (JP) | 2016-04-27 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | MEN1 1579/4885KMT2A 607/4885CA1 131/4885 |
| US-11067889-B2 | Compound, composition, and method for producing same, underlayer film forming material for lithography, composition for underlayer film formation for lithography, and purification method | C5, C9, PRMT9 | MEN1 146/4885KMT2A 391/4885CA1 444/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | MEN1 1512/4885KMT2A 633/4885CA1 161/4885 |
| US-11130724-B2 | Compound, resin, composition, resist pattern formation method, and circuit pattern formation method | RER1, NBAS, INTS9 | MEN1 4292/4885KMT2A 1279/4885CA1 513/4885 |
| US-20170075220-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | HEATR1, ABCC1, HEATR6 | MEN1 3775/4885KMT2A 1175/4885CA1 2670/4885 |
| US-10642156-B2 | Resist base material, resist composition and method for forming resist pattern | CROCC, REV1, PARG | MEN1 1453/4885KMT2A 1233/4885CA1 1691/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.