SCHEMBL17736487

SCHEMBL17736487

CC(C)c1cc(C(C)C)c(S(=O)(=O)O/N=C(\C(=O)C(C)(C)C)c2nc3ccc4ccccc4c3o2)c(C(C)C)c1

nearest known ligand 0.38

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
▸ ENPP3 O14638 2/20 0.38
▸ ENPP1 P22413 2/20 0.38
▸ PIK3CD O00329 1/20 0.33
▸ PIK3CA P42336 1/20 0.33
▸ PIK3CB P42338 1/20 0.33
▸ PIK3CG P48736 1/20 0.33
▸ PSEN1 P49768 1/20 0.32
▸ PSEN2 P49810 1/20 0.32
▸ APH1B Q8WW43 1/20 0.32
▸ NCSTN Q92542 1/20 0.32
▸ APH1A Q96BI3 1/20 0.32
▸ PSENEN Q9NZ42 1/20 0.32
▸ FABP3 P05413 1/20 0.31
▸ FABP4 P15090 1/20 0.31
▸ FABP5 Q01469 1/20 0.31
▸ TDP1 Q9NUW8 1/20 0.30
▸ PDE4B Q07343 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17736501 0.86 ENPP3 (0.39) ENPP3ENPP1PIK3CDPIK3CAPIK3CB
SCHEMBL17736497 0.86 XDH (0.37) ENPP3ENPP1PIK3CDPIK3CAPIK3CB
SCHEMBL17736511 0.83 LIPG (0.34) ENPP3ENPP1PIK3CDPIK3CAPIK3CB
SCHEMBL17736486 0.82 ENPP3 (0.38) ENPP3ENPP1PSEN1PSEN2APH1B
SCHEMBL17736510 0.82 ENPP3 (0.32) ENPP3ENPP1FABP3FABP4FABP5
SCHEMBL16381781 0.80 HKDC1 (0.34) —
SCHEMBL17736509 0.78 XDH (0.37) ENPP3ENPP1PIK3CDPIK3CAPIK3CB
SCHEMBL17736515 0.77 HDAC4 (0.31) —
SCHEMBL17736488 0.76 TSHR (0.44) ENPP3ENPP1FABP3FABP4FABP5
SCHEMBL17736499 0.72 XIAP (0.38) ENPP3ENPP1PIK3CDPIK3CAPIK3CB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
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