SCHEMBL17736506

SCHEMBL17736506

O=C(/C(=N\OS(=O)(=O)C(F)(F)C(=O)OCC12CC3CC(CC(C3)C1)C2)c1nc2ccccc2o1)C1CCCCC1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ CTSS P25774 3/20 0.36
▸ FAAH O00519 2/20 0.35
▸ HSF1 Q00613 4/20 0.33
▸ RBP4 P02753 1/20 0.32
▸ GABRP O00591 1/20 0.32
▸ GABRD O14764 1/20 0.32
▸ GABRA1 P14867 1/20 0.32
▸ GABRB1 P18505 1/20 0.32
▸ GABRG2 P18507 1/20 0.32
▸ GABRB3 P28472 1/20 0.32
▸ GABRA5 P31644 1/20 0.32
▸ GABRA3 P34903 1/20 0.32
▸ GABRA2 P47869 1/20 0.32
▸ GABRB2 P47870 1/20 0.32
▸ GABRA4 P48169 1/20 0.32
▸ GABRE P78334 1/20 0.32
▸ GABRA6 Q16445 1/20 0.32
▸ GABRG1 Q8N1C3 1/20 0.32
▸ GABRG3 Q99928 1/20 0.32
▸ GABRQ Q9UN88 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16745522 0.72 CTSS (0.45) CTSSFAAHXDHNLRP3
SCHEMBL10150823 0.71 P2RX7 (0.38) FAAHLMNA
SCHEMBL17736503 0.70 CYP1A2 (0.37) CTSSHSF1XDHLMNAHTT
SCHEMBL17341902 0.69 FAAH (0.44) CTSSFAAHHSF1RBP4GABRP
SCHEMBL17736500 0.67 XDH (0.39) FAAHHSF1XDHTLR4NLRP3
SCHEMBL961708 0.65 KMT2A (0.37) SMN1; SMN2
SCHEMBL17736490 0.65 CYP1A2 (0.38) FAAHHSF1XDHLMNAHTT
SCHEMBL10150841 0.64 P2RX7 (0.32) —
SCHEMBL10150837 0.64 SCN9A (0.37) LMNAMAPT
SCHEMBL26191695 0.63 EPHX2 (0.41) FAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 — — US disclosed
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