SCHEMBL17819150

SCHEMBL17819150

CCCS(=O)(=O)[O-].CCCS(=O)(=O)[O-].[Na+].[Na+]

nearest known ligand 0.50

Known targets — ChEMBL curated mechanism

ABCC8ACEADORA1ADORA2AADORA2BADORA3ALDH5A1ALOX5ALOX5APATP4AATP4BBRAFCA1CA12CA2CA4CYSLTR1DHFRDPEP1EDNRAEDNRBESR2F10FDPSFGF1GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTGNRHRGSC1HMGCRIMPDH1IMPDH2KCNJ11LY96NOD2NR3C1NS3NS4ANS5bP2RY1P2RY12P2RY2P2RY4P2RY6PBP2XPDE3APDE3BPDE4APDE4BPDE4CPDE4DPDK1PDK2PDK3PDK4PPARGPPATPTGIRPTGS1PTGS2RAF1RYR1RYR3SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASERPINC1SLC12A1SLC12A3SYKTHRATHRBTLR3TLR4TLR9TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYMSVKORC1XDHblablaIMP-1blaOXA-33blaOXA-58blaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAfolPfolP1ftsIfusAgaggyrAgyrBmecAmrcAmrcBmrdApbp1apbp1bpbp2pbp2apbp2bpbp3pbp4pbpApbpBpbpCpbpFpolponBrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpoArpoBrpoCrpoZrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 known ✓ P00915 2/20 0.30
MAPT P10636 2/20 0.50
KDM4E B2RXH2 1/20 0.50
ALOX15 P16050 1/20 0.50
TSHR P16473 4/20 0.46
MAPK1 P28482 3/20 0.46
ALDH1A1 P00352 3/20 0.46
LMNA P02545 2/20 0.46
TP53 P04637 2/20 0.46
SMN1; SMN2 Q16637 2/20 0.46
GMNN O75496 1/20 0.46
THPO P40225 1/20 0.46
HBB P68871 1/20 0.46
PMP22 Q01453 1/20 0.46
BBOX1 O75936 3/20 0.42
RECQL P46063 2/20 0.37
EPHX2 P34913 2/20 0.37
ENPEP Q07075 2/20 0.37
HPGD P15428 2/20 0.37
GLA P06280 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL659204 1.00
Water SCHEMBL60894 0.97
SCHEMBL22418726 0.94 KDM4E (0.52) MAPTKDM4EALOX15TSHRMAPK1
SCHEMBL28719938 0.94 KDM4E (0.52) MAPTKDM4EALOX15TSHRMAPK1
SCHEMBL20533801 0.93 MAPT (0.43) MAPTKDM4EALOX15TSHRMAPK1
SCHEMBL22581627 0.93 MAPT (0.43) MAPTKDM4EALOX15TSHRMAPK1
SCHEMBL20533645 0.93 MAPT (0.43) MAPTKDM4EALOX15TSHRMAPK1
SCHEMBL20533804 0.93 MAPT (0.43) MAPTKDM4EALOX15TSHRMAPK1
SCHEMBL20533539 0.93 MAPT (0.43) MAPTKDM4EALOX15TSHRMAPK1
Zinc Ion SCHEMBL6912620 0.93 MAPT (0.43) MAPTKDM4EALOX15TSHRMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160190007-A1 A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2016-06-30 US claimed
US-20160168738-A1 Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2016-06-16 US claimed
WO-2025086728-A1 COPPER PLATING SOLUTION, METALLIC COPPER LAYER COMPRISING SAME AND USE OF COPPER PLATING SOLUTION 江阴纳力新材料科技有限公司 2025-05-01 WO disclosed
CN-111910222-B Electrolytic copper foil additive with brightening and leveling functions and application thereof 九江德福科技股份有限公司 2022-08-23 CN disclosed
US-9856572-B2 Additive for reducing voids after annealing of copper plating with through silicon via SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2018-01-02 US disclosed
US-20160190007-A1 A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2016-06-30 US disclosed
US-20160168738-A1 Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) 2016-06-16 US disclosed