Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | RAB9A | P51151 | 2/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.40 |
| ▸ | CA1 | P00915 | 1/20 | 0.40 |
| ▸ | CA2 | P00918 | 1/20 | 0.40 |
| ▸ | NQO2 | P16083 | 2/20 | 0.40 |
| ▸ | MAPT | P10636 | 3/20 | 0.39 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.39 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.39 |
| ▸ | HPGD | P15428 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.39 |
| ▸ | APEX1 | P27695 | 1/20 | 0.39 |
| ▸ | BLM | P54132 | 1/20 | 0.39 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.39 |
| ▸ | PDE4A | P27815 | 1/20 | 0.38 |
| ▸ | PDE4B | Q07343 | 1/20 | 0.38 |
| ▸ | PDE4C | Q08493 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL36047 | 1.00 | RAB9A (0.40) | RAB9ASMN1; SMN2CA1CA2NQO2 | |
| SCHEMBL9891190 | 0.91 | PLA2G7 (0.36) | MAPT | |
| SCHEMBL18431383 | 0.91 | PLA2G7 (0.36) | MAPT | |
| SCHEMBL17109491 | 0.89 | PLA2G7 (0.33) | MAPT | |
| SCHEMBL12073504 | 0.88 | SMN1; SMN2 (0.33) | RAB9ASMN1; SMN2MAPTALDH1A1CYP3A4 | |
| SCHEMBL107127 | 0.87 | CA2 (0.34) | RAB9ASMN1; SMN2CA1CA2MAPT | |
| SCHEMBL11951414 | 0.86 | SMN1; SMN2 (0.39) | RAB9ASMN1; SMN2NQO2MAPTNPSR1 | |
| SCHEMBL3758320 | 0.86 | NQO2 (0.41) | RAB9ASMN1; SMN2CA1CA2NQO2 | |
| SCHEMBL14375144 | 0.86 | PLA2G7 (0.33) | MAPTALDH1A1 | |
| SCHEMBL296645 | 0.85 | NQO2 (0.43) | RAB9ASMN1; SMN2CA1CA2NQO2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1442 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230287179-A1 | HIGHLY SOLUBLE TRIS-(2,3-EPOXYPROPYL)-ISOCYANURATE AND METHOD FOR PRODUCING SAME | NISSAN CHEMICAL CORPORATION (JP) | 2023-09-14 | — | — | US | disclosed |
| EP-3896522-B1 | PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO LTD (JP) | 2023-05-03 | — | — | EP | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| US-11579528-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-02-14 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| WO-2023008355-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | 三菱瓦斯化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| WO-2023008354-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| US-6569596-B1 | Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-05-27 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| EP-0780729-B1 | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO LTD (JP) | 2002-07-10 | — | — | EP | disclosed |
| US-6268108-B1 | MIXTURE OF COMPOUND FORMING ACID UPON EXPOSURE OF ACTINIC RADIATION, COMPOUND CAPABLE OF CROSSLINKING, DYE AND SOLVENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-07-31 | — | — | US | disclosed |
| EP-1103856-A1 | Positive resist composition & process for forming resist pattern using same | Central Glass Company, Limited (JP) | 2001-05-30 | — | — | EP | disclosed |
| US-6153354-A | INCLUDING ALKALI-SOLUBLE RESIN, ACID-CROSSLINKABLE SUBSTANCE, ACID GENERATING AGENT, AND SENSITIZING SUBSTANCE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-11-28 | — | — | US | disclosed |
| US-6063953-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-05-16 | — | — | US | disclosed |
| US-6022666-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-02-08 | — | — | US | disclosed |
| US-5902713-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-05-11 | — | — | US | disclosed |
| EP-0780729-A1 | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1997-06-25 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | RAB9A 790/4885SMN1; SMN2 4342/4885CA1 1120/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | RAB9A 2106/4885SMN1; SMN2 4809/4885CA1 161/4885 |
| US-20230287179-A1 | HIGHLY SOLUBLE TRIS-(2,3-EPOXYPROPYL)-ISOCYANURATE AND METHOD FOR PRODUCING SAME | TTPA, USP1, USP2 | RAB9A 3067/4885SMN1; SMN2 3817/4885CA1 442/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.