Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 4/20 | 0.36 |
| ▸ | CA1 | P00915 | 6/20 | 0.35 |
| ▸ | CA2 | P00918 | 6/20 | 0.35 |
| ▸ | MMP1 | P03956 | 5/20 | 0.35 |
| ▸ | MMP2 | P08253 | 5/20 | 0.35 |
| ▸ | MMP9 | P14780 | 5/20 | 0.35 |
| ▸ | MMP8 | P22894 | 5/20 | 0.35 |
| ▸ | MMP13 | P45452 | 5/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | TSHR | P16473 | 1/20 | 0.30 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1516293 | 0.87 | HSD11B1 (0.36) | HSD11B1CA1CA2MMP1MMP2 | |
| Trifluoromethanesulfonic Acid SCHEMBL1813935 | 0.86 | ALDH1A1 (0.39) | HSD11B1CA2ALDH1A1TSHRTDP1 | |
| SCHEMBL2003359 | 0.86 | CA1 (0.35) | HSD11B1CA1CA2MMP1MMP2 | |
| SCHEMBL1360857 | 0.84 | CA2 (0.38) | CA1CA2MMP1MMP2MMP9 | |
| Trifluoromethanesulfonic Acid SCHEMBL3413691 | 0.78 | GPR3 (0.37) | HSD11B1CA1CA2MMP1MMP2 | |
| SCHEMBL4801237 | 0.78 | CA1 (0.35) | HSD11B1CA1CA2MMP1MMP2 | |
| SCHEMBL5826443 | 0.78 | HSD11B1 (0.39) | HSD11B1CA1CA2MMP1MMP2 | |
| SCHEMBL2634848 | 0.78 | HSD11B1 (0.39) | HSD11B1CA1CA2MMP1MMP2 | |
| SCHEMBL30897218 | 0.78 | HSD11B1 (0.39) | HSD11B1CA1CA2MMP1MMP2 | |
| Trifluoromethanesulfonic Acid SCHEMBL1813934 | 0.77 | HSD11B1 (0.40) | HSD11B1ALDH1A1TSHRTDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7943285-B2 | Forming intermediate layer pattern by etching intermediate film with first resist pattern used as a mask; high resolution attained by double patterning; treatment with acetic, formic, methansulfonic, or butanesulfonic acid; immersion lithography; crosslinking, annealing | PANASONIC CORPORATION (JP) | 2011-05-17 | — | — | US | claimed |
| US-20080227038-A1 | PATTERN FORMATION METHOD | PANASONIC CORPORATION (JP) | 2008-09-18 | — | — | US | claimed |
| US-7943285-B2 | Forming intermediate layer pattern by etching intermediate film with first resist pattern used as a mask; high resolution attained by double patterning; treatment with acetic, formic, methansulfonic, or butanesulfonic acid; immersion lithography; crosslinking, annealing | PANASONIC CORPORATION (JP) | 2011-05-17 | — | — | US | disclosed |
| US-20080227038-A1 | PATTERN FORMATION METHOD | PANASONIC CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |