SCHEMBL18924277

SCHEMBL18924277

O=C(OC1CCC(CCNSC(F)(F)F)CC1)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.34

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.34
MAPT P10636 2/20 0.34
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
GAA P10253 1/20 0.33
XBP1 P17861 1/20 0.33
LMNA P02545 1/20 0.32
EPHX1 P07099 1/20 0.31
PRKCA P17252 1/20 0.31
TSHR P16473 1/20 0.31
SCN1A P35498 1/20 0.31
SCN2A Q99250 1/20 0.31
SCN3A Q9NY46 1/20 0.31
KDM4E B2RXH2 1/20 0.31
HTT P42858 1/20 0.31
RECQL P46063 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23612661 0.84
SCHEMBL9924184 0.81 ALDH1A1 (0.35) ALDH1A1MAPTMEN1KMT2ANPSR1
SCHEMBL24360863 0.81 ALDH1A1 (0.38) ALDH1A1MAPTMEN1KMT2ANPSR1
SCHEMBL9925526 0.80 ALDH1A1 (0.33) ALDH1A1MAPTMEN1KMT2ANPSR1
SCHEMBL15746855 0.77 ALDH1A1 (0.33) ALDH1A1MAPTMEN1KMT2ANPSR1
SCHEMBL25629772 0.77 MEN1 (0.31) ALDH1A1MAPTMEN1KMT2ANPSR1
SCHEMBL18924230 0.77 ALDH1A1 (0.44) ALDH1A1MAPTMEN1KMT2ANPSR1
SCHEMBL26849870 0.77 EPHX2 (0.41) ALDH1A1MAPTMEN1KMT2ANPSR1
SCHEMBL26188220 0.76 LMNA (0.40) ALDH1A1MAPTMEN1KMT2ANPSR1
SCHEMBL19719270 0.75 MAPT (0.32) MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230288807-A1 PHOTORESIST, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF EXTREME ULTRAVIOLET LITHOGRAPHY TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-09-14 US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11693313-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-11635686-B2 Resist composition, method of forming resist pattern, and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-25 US disclosed
US-20220011666-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND RESIN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-01-13 US disclosed
US-11221557-B2 Resist composition, method of forming resist pattern, compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2022-01-11 US disclosed
US-20210364920-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2021-11-25 US disclosed
US-20200174366-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-04 US disclosed
US-20200159119-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-05-21 US disclosed
US-20200135451-A1 PROTECTIVE COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-04-30 US disclosed
US-10414918-B2 Method of preparing polymer compound TOKYO OHKA KOGYO CO., LTD. (JP) 2019-09-17 US disclosed
US-10394122-B2 Resist composition, method for forming resist pattern, compound, and acid generator TOYKO OHKA KOGYO CO., LTD. (JP) 2019-08-27 US disclosed
US-10241406-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2019-03-26 US disclosed
US-20180022916-A1 METHOD OF PREPARING POLYMER COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2018-01-25 US disclosed
US-9690194-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-27 US disclosed
US-9678423-B2 Resist composition, method for forming resist pattern, acid generator and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-13 US disclosed
US-9671690-B2 Resist composition, method for forming resist pattern, photo-reactive quencher and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-06-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 ALDH1A1 3475/4885MAPT 4059/4885MEN1 1046/4885
US-11693313-B2 Resist composition and method of forming resist pattern C1R, C1S, C9 ALDH1A1 1921/4885MAPT 3206/4885MEN1 1250/4885
US-10241406-B2 Resist composition and method for forming resist pattern RB1, CHD1, SMARCA1 ALDH1A1 1374/4885MAPT 3748/4885MEN1 874/4885
US-11635686-B2 Resist composition, method of forming resist pattern, and compound FXR1, HNRNPA1, RBM3 ALDH1A1 3035/4885MAPT 2792/4885MEN1 1564/4885
US-20200174366-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND FXR1, HNRNPA1, RBM3 ALDH1A1 3035/4885MAPT 2792/4885MEN1 1564/4885
US-10394122-B2 Resist composition, method for forming resist pattern, compound, and acid generator RB1, FXR1, CCNA1 ALDH1A1 1415/4885MAPT 3580/4885MEN1 76/4885
US-11221557-B2 Resist composition, method of forming resist pattern, compound, and acid generator RER1, GRM1, RRS1 ALDH1A1 2200/4885MAPT 4145/4885MEN1 186/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.