SCHEMBL1898338

SCHEMBL1898338

C=Cc1ccc(C(=O)OC2(C)COC(=O)C2)cc1

nearest known ligand 0.35

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
RARB P10826 1/20 0.35
RARG P13631 1/20 0.35
RASGRP3 Q8IV61 6/20 0.35
PRKCA P17252 6/20 0.35
PRKCE Q02156 4/20 0.35
PIM1 P11309 1/20 0.34
SNCA P37840 1/20 0.34
ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1901746 0.87 RARB (0.34) RARBRARGPIM1SNCAALDH1A1
SCHEMBL1900520 0.87 LMNA (0.38) RARBRARGRASGRP3PRKCAPRKCE
SCHEMBL1900389 0.81 TAS1R3 (0.35) RARBRARGRASGRP3PRKCAPRKCE
SCHEMBL14527796 0.77 CYP19A1 (0.38) RARBRARGPIM1SNCAALDH1A1
SCHEMBL24948263 0.77 TAS1R3 (0.35) RARBRARGPIM1SNCAALDH1A1
SCHEMBL14665535 0.77 TAS1R3 (0.39) PRKCAPIM1SNCAALDH1A1
SCHEMBL24948267 0.77 ALDH1A1 (0.38) RARBRARGPIM1SNCAALDH1A1
SCHEMBL17247256 0.76 CYP19A1 (0.40) RARBRARGPIM1SNCAALDH1A1
SCHEMBL1896439 0.74 TAS1R3 (0.34) RARBRARGPIM1
SCHEMBL1901036 0.74 TAS1R3 (0.34) RARBRARGRASGRP3PRKCAPRKCE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed