SCHEMBL1900731

SCHEMBL1900731

C=Cc1ccc(C(=O)OC2(CC)CCCC(=O)O2)cc1

nearest known ligand 0.34

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TAS1R3 Q7RTX0 2/20 0.34
TAS1R1 Q7RTX1 2/20 0.34
ALDH1A1 P00352 2/20 0.34
PRKCA P17252 2/20 0.32
PRKCE Q02156 2/20 0.32
RASGRP3 Q8IV61 2/20 0.32
PIM1 P11309 1/20 0.31
SIRT2 Q8IXJ6 1/20 0.31
NPC1 O15118 1/20 0.30
MAPT P10636 1/20 0.30
RAB9A P51151 1/20 0.30
KMT2A Q03164 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1898983 0.93 TAS1R3 (0.35) TAS1R3TAS1R1ALDH1A1PRKCAPRKCE
SCHEMBL1901510 0.82 TAS1R3 (0.35) TAS1R3TAS1R1ALDH1A1PRKCAPRKCE
SCHEMBL1898289 0.77 PIM1 (0.34) TAS1R3TAS1R1ALDH1A1PRKCAPRKCE
SCHEMBL24305829 0.76 PTGS2 (0.35)
SCHEMBL9963791 0.75 TAS1R3 (0.40) TAS1R3TAS1R1ALDH1A1PIM1NPC1
SCHEMBL1896439 0.74 TAS1R3 (0.34) TAS1R3TAS1R1PIM1
SCHEMBL24948256 0.74 TAS1R3 (0.39) TAS1R3TAS1R1ALDH1A1PIM1NPC1
SCHEMBL1900931 0.73 TAS1R3 (0.36) TAS1R3TAS1R1ALDH1A1PIM1
SCHEMBL24948259 0.73 TAS1R3 (0.36) TAS1R3TAS1R1ALDH1A1PIM1NPC1
SCHEMBL1898804 0.72 TAS1R3 (0.38) TAS1R3TAS1R1ALDH1A1PIM1NPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed