SCHEMBL1918647

SCHEMBL1918647

CC(C)Cc1ccccc1[SiH2]O

nearest known ligand 0.55

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 2/20 0.52
GABRB2 P47870 2/20 0.52
PTGS2 P35354 1/20 0.32
TRPA1 O75762 1/20 0.31
ELANE P08246 1/20 0.31
CTSG P08311 1/20 0.31
POLB P06746 1/20 0.31
MAPK1 P28482 1/20 0.31
SLC6A2 P23975 2/20 0.30
TAAR1 Q96RJ0 2/20 0.30
MAOA P21397 1/20 0.30
SLC6A4 P31645 1/20 0.30
SLC6A3 Q01959 1/20 0.30
SIGMAR1 Q99720 1/20 0.30
CYP2A6 P11509 1/20 0.30
ADORA2A P29274 1/20 0.30
ADORA1 P30542 1/20 0.30
HSP90AA1 P07900 1/20 0.30
HSP90AB1 P08238 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2522528 0.82 GABRA1 (0.52) GABRA1GABRB2ELANECTSG
SCHEMBL1918624 0.80 SLC6A2 (0.38) GABRA1GABRB2POLBSLC6A2SLC6A4
SCHEMBL2519258 0.80 GABRA1 (0.48) GABRA1GABRB2ELANECTSG
SCHEMBL9702361 0.79 GABRA1 (0.47) GABRA1GABRB2SLC6A2TAAR1MAOA
Hydrogen Peroxide SCHEMBL5685702 0.77 GABRA1 (0.65) GABRA1GABRB2PTGS2TRPA1POLB
SCHEMBL840750 0.77 GABRA1 (0.64) GABRA1GABRB2TRPA1SLC6A2TAAR1
SCHEMBL6114437 0.76 GABRA1 (0.46) GABRA1GABRB2MAOA
SCHEMBL5174936 0.74 GABRA1 (0.61) GABRA1GABRB2TRPA1POLBMAPK1
SCHEMBL5174943 0.74 GABRA1 (0.61) GABRA1GABRB2TRPA1POLBMAPK1
SCHEMBL11317155 0.73 GABRA1 (0.60) GABRA1GABRB2TRPA1ELANECTSG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 137 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026100338-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN 旭化成株式会社 2026-05-15 WO disclosed
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-28 US disclosed
US-12601970-B2 Photosensitive resin composition, method for manufacturing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic component HD MICROSYSTEMS, LTD. (JP) 2026-04-14 US disclosed
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-09 US disclosed
US-12504688-B2 Negative photosensitive resin composition and method for manufacturing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-23 US disclosed
US-20250370339-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-04 US disclosed
US-20250362601-A1 Photosensitive Resin Composition, Method Of Manufacturing Pattern Cured Film, Cured Film, Interlayer Insulating Film, Cover Coat Layer, Surface Protective Film, And Electronic Component HD MICROSYSTEMS LTD (JP) 2025-11-27 US disclosed
US-20250341778-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING POLYIMIDE AND CURED RELIEF PATTERN USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-11-06 US disclosed
US-12405198-B2 Photosensitive resin composition, method for selecting photosensitive resin composition, method for producing patterned cured film, and method for producing semiconductor device RESONAC CORPORATION (JP) 2025-09-02 US disclosed
US-12386257-B2 Photosensitive resin composition, method of manufacturing pattern cured film, cured film, interlayer insulating film, cover coat layer, surface protective film, and electronic component HD MICROSYSTEMS, LTD. (JP) 2025-08-12 US disclosed
EP-2221666-A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCTION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Hitachi Chemical Company, Ltd. (JP) 2010-08-25 EP disclosed
US-20100159217-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERNS, AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD (JP) 2010-06-24 US disclosed
US-20100092879-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNED HARDENED FILM WITH USE THEREOF AND ELECTRONIC PART HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2010-04-15 US disclosed
US-7638254-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD (JP) 2009-12-29 US disclosed
EP-2133743-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNED HARDENED FILM WITH USE THEREOF AND ELECTRONIC PART Hitachi Chemical DuPont Microsystems, Ltd. (JP) 2009-12-16 EP disclosed
US-20090181224-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND ELECTRONIC PARTS HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2009-07-16 US disclosed
US-20090011364-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC PART HATTORI TAKASHI 2009-01-08 US disclosed
US-7435525-B2 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2008-10-14 US disclosed
US-20070122733-A1 Positive photosensitive resin composition, method for forming pattern, and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2007-05-31 US disclosed
EP-1744213-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC COMPONENT Hitachi Chemical DuPont Microsystems Ltd. (JP) 2007-01-17 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ARCN1, GLRA1, PSMA1 GABRA1 186/4885GABRB2 311/4885PTGS2 158/4885
US-12601970-B2 Photosensitive resin composition, method for manufacturing patterned cured product, cured product, interlayer insulating film, cover coat layer, surface protective film, and electronic component ARCN1, P4HA1, COL1A1 GABRA1 892/4885GABRB2 1014/4885PTGS2 1412/4885
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME CD79B, ITGA1, PTK2 GABRA1 66/4885GABRB2 170/4885PTGS2 738/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.