Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CTSK | P43235 | 11/20 | 0.47 |
| ▸ | CTSL | P07711 | 7/20 | 0.47 |
| ▸ | CTSB | P07858 | 7/20 | 0.47 |
| ▸ | CTSH | P09668 | 5/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11231610 | 1.00 | CTSK (0.47) | CTSKCTSLCTSBCTSHCYP1A2 | |
| SCHEMBL191969 | 0.97 | CTSK (0.45) | CTSKCTSLCTSBCTSHCYP1A2 | |
| SCHEMBL16590926 | 0.91 | CTSK (0.45) | CTSKCTSLCTSBCTSH | |
| SCHEMBL15279313 | 0.91 | CTSK (0.45) | CTSKCTSLCTSBCTSH | |
| SCHEMBL28296546 | 0.85 | CTSK (0.46) | CTSKCTSLCTSBCTSHCYP1A2 | |
| SCHEMBL21402584 | 0.83 | CTSK (0.44) | CTSKCTSLCTSBCTSH | |
| SCHEMBL14537236 | 0.83 | CTSK (0.45) | CTSKCTSLCTSBCTSHCYP1A2 | |
| SCHEMBL11239152 | 0.80 | CTSK (0.42) | CTSKCTSLCTSBCTSHCYP1A2 | |
| SCHEMBL16590939 | 0.79 | CTSK (0.42) | CTSKCTSLCTSBCTSHCYP1A2 | |
| SCHEMBL10430388 | 0.78 | CTSK (0.41) | CTSKCTSLCTSBCTSHCYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 90 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12631966-B2 | Method for forming photoresist patterns | SAMSUNG SDI CO., LTD. (KR) | 2026-05-19 | — | — | US | claimed |
| US-12590221-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-03-31 | — | — | US | claimed |
| US-12554199-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-02-17 | — | — | US | claimed |
| US-20230028244-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230024422-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230021469-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230026579-A1 | METHOD FOR FORMING PHOTORESIST PATTERNS | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230026721-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-12631966-B2 | Method for forming photoresist patterns | SAMSUNG SDI CO., LTD. (KR) | 2026-05-19 | — | — | US | disclosed |
| US-12590221-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-03-31 | — | — | US | disclosed |
| US-20260050212-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2026-02-19 | — | — | US | disclosed |
| US-12554199-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-02-17 | — | — | US | disclosed |
| US-20260036906-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2026-02-05 | — | — | US | disclosed |
| US-20260003286-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2026-01-01 | — | — | US | disclosed |
| US-20100040974-A1 | UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN | JSR CORPORATION (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100021852-A1 | COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN | JSR CORPORATION (JP) | 2010-01-28 | — | — | US | disclosed |
| US-20100003615-A1 | UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD | JSR CORPORATION (JP) | 2010-01-07 | — | — | US | disclosed |
| EP-2131240-A1 | POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION | JSR Corporation (JP) | 2009-12-09 | — | — | EP | disclosed |
| EP-2078983-A1 | COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN | JSR Corporation (JP) | 2009-07-15 | — | — | EP | disclosed |
| EP-1950610-A1 | COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN | JSR Corporation (JP) | 2008-07-30 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230024422-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | TOP1, TOP2A, FTO | CTSK 4676/4885CTSL 4881/4885CTSB 4838/4885 |
| US-12631966-B2 | Method for forming photoresist patterns | FTO, SOAT1, SOAT2 | CTSK 3619/4885CTSL 4497/4885CTSB 4663/4885 |
| US-12554199-B2 | Resist topcoat composition, and method of forming patterns using the composition | FGFR2, FGFR1, FDFT1 | CTSK 3438/4885CTSL 4851/4885CTSB 4728/4885 |
| US-20260036906-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | CPT1A, RER1, CPT1B | CTSK 4526/4885CTSL 4717/4885CTSB 4825/4885 |
| US-20260003286-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | RER1, CPT1A, SOAT1 | CTSK 4239/4885CTSL 4630/4885CTSB 4757/4885 |
| US-20230021469-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | COL2A1, TOP1, TOP2A | CTSK 4504/4885CTSL 4801/4885CTSB 4773/4885 |
| US-12590221-B2 | Resist topcoat composition, and method of forming patterns using the composition | RER1, TOP1, RRS1 | CTSK 4725/4885CTSL 4784/4885CTSB 4763/4885 |
| US-20260050212-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | CPT1A, COL1A1, RCOR1 | CTSK 4204/4885CTSL 4786/4885CTSB 4798/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.