SCHEMBL1968087

SCHEMBL1968087

COCO[Si](CCc1ccccc1)(OC)OC

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.38
KDM4E B2RXH2 1/20 0.36
LMNA P02545 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.35
ALDH1A1 P00352 2/20 0.34
HPGD P15428 1/20 0.34
ALOX15 P16050 1/20 0.34
ALOX12 P18054 1/20 0.34
CASP1 P29466 1/20 0.34
HSD17B10 Q99714 1/20 0.34
TAAR1 Q96RJ0 5/20 0.34
ATM Q13315 1/20 0.34
CYP2A6 P11509 1/20 0.33
HTR2A P28223 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
LOXL2 Q9Y4K0 1/20 0.33
KCNH2 Q12809 1/20 0.33
NPC1 O15118 2/20 0.33
RAB9A P51151 2/20 0.33
GAA P10253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3345351 0.90 IDO1 (0.38) KDM4ELMNAL3MBTL1ALDH1A1KCNH2
SCHEMBL106416 0.85 TDP1 (0.46) TDP1ALDH1A1HPGDALOX15ALOX12
SCHEMBL10696910 0.84 TDP1 (0.39) TDP1KDM4ELMNAALDH1A1HPGD
SCHEMBL1352335 0.83 TDP1 (0.33) TDP1LMNAL3MBTL1ALDH1A1HPGD
SCHEMBL2488885 0.82 HTR2A (0.42) TDP1TAAR1CYP2A6HTR2ASMN1; SMN2
SCHEMBL1765960 0.82 TDP1 (0.47) TDP1KDM4ELMNAALDH1A1HPGD
SCHEMBL1972981 0.81 LTA4H (0.34) L3MBTL1ALDH1A1TAAR1ATMNPC1
SCHEMBL6332013 0.81 RAB9A (0.38) TDP1KDM4ELMNASMN1; SMN2NPC1
SCHEMBL28889706 0.80 TSHR (0.42) TDP1LMNAL3MBTL1ALDH1A1TAAR1
SCHEMBL139765 0.79 TDP1 (0.35) TDP1KDM4ELMNAL3MBTL1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 164 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
CN-121586750-A Composition for forming silicon-containing underlayer film for directional self-assembly 日产化学株式会社 2026-02-27 CN disclosed
EP-4679175-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Corporation (JP) 2026-01-14 EP disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-12493243-B2 Film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2025-12-09 US disclosed
US-20250362609-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
US-20250348001-A1 METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT NISSAN CHEMICAL CORPORATION (JP) 2025-11-13 US disclosed
US-9290623-B2 Composition for forming silicon-containing resist underlayer film having cyclic diester group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-03-22 US disclosed
US-20150322212-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-11-12 US disclosed
US-20150316849-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ESTER GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-11-05 US disclosed
EP-2916170-A1 ESTER-GROUP-CONTAINING COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Industries, Ltd. (JP) 2015-09-09 EP disclosed
CN-104737076-A Ester-group-containing composition for forming silicon-containing resist underlayer film NISSAN CHEMICAL IND LTD 2015-06-24 CN disclosed
US-8877425-B2 Silicon-containing resist underlayer film forming composition having fluorine-based additive NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-11-04 US disclosed
US-8864894-B2 Resist underlayer film forming composition containing silicone having onium group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-10-21 US disclosed
US-20130224957-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING FLUORINE-BASED ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-08-29 US disclosed
EP-2336256-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM WITH ONIUM GROUP Nissan Chemical Industries, Ltd. (JP) 2011-06-22 EP disclosed
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-06-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150322212-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP ASH2L, SRRM2, CCNT1 TDP1 2127/4885KDM4E 609/4885LMNA 647/4885
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 TDP1 2376/4885KDM4E 63/4885LMNA 474/4885
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP SRR, KDM2B, MSR1 TDP1 3194/4885KDM4E 46/4885LMNA 434/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L TDP1 3751/4885KDM4E 550/4885LMNA 625/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.