Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA12 | O43570 | 2/20 | 0.47 |
| ▸ | CA1 | P00915 | 2/20 | 0.47 |
| ▸ | CA2 | P00918 | 2/20 | 0.47 |
| ▸ | CA9 | Q16790 | 2/20 | 0.47 |
| ▸ | GRIN2D | O15399 | 5/20 | 0.46 |
| ▸ | GRIN3B | O60391 | 5/20 | 0.46 |
| ▸ | GRIN1 | Q05586 | 5/20 | 0.46 |
| ▸ | GRIN2A | Q12879 | 5/20 | 0.46 |
| ▸ | GRIN2B | Q13224 | 5/20 | 0.46 |
| ▸ | GRIN2C | Q14957 | 5/20 | 0.46 |
| ▸ | GRIN3A | Q8TCU5 | 5/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.41 |
| ▸ | MEN1 | O00255 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.35 |
| ▸ | GBA2 | Q9HCG7 | 1/20 | 0.34 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5095244 | 0.78 | GRIN2D (0.50) | CA12CA1CA2CA9GRIN2D | |
| SCHEMBL17969022 | 0.75 | — | — | |
| SCHEMBL919840 | 0.75 | CA12 (0.44) | CA12CA1CA2CA9GRIN2D | |
| SCHEMBL20612578 | 0.74 | CA12 (0.47) | CA12CA1CA2CA9GRIN2D | |
| SCHEMBL1714716 | 0.74 | GRIN2D (0.52) | CA12CA1CA2CA9GRIN2D | |
| SCHEMBL197070 | 0.74 | GRIN2D (0.48) | CA12CA1CA2CA9GRIN2D | |
| SCHEMBL919449 | 0.73 | CA12 (0.42) | CA12CA1CA2CA9GRIN2D | |
| SCHEMBL5547697 | 0.73 | CA12 (0.42) | CA12CA1CA2CA9GRIN2D | |
| SCHEMBL855034 | 0.72 | CA12 (0.45) | CA12CA1CA2CA9GRIN2D | |
| Hydrochloric Acid SCHEMBL1715743 | 0.72 | GRIN2D (0.50) | CA12CA1CA2CA9GRIN2D |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 163 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2955575-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYPHENOL DERIVATIVE USED IN SAME | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | claimed |
| CN-104281006-B | Radiation-ray sensitive composition | 三菱瓦斯化学株式会社 | 2019-01-22 | — | — | CN | claimed |
| CN-108008600-A | Radiation-ray sensitive composition | 三菱瓦斯化学株式会社 | 2018-05-08 | — | — | CN | claimed |
| US-9897913-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-02-20 | — | — | US | claimed |
| CN-103102251-B | Radiation-ray sensitive composition | MITSUBISHI GAS CHEMICAL INC. (JP) | 2016-01-20 | — | — | CN | claimed |
| US-20150030980-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2015-01-29 | — | — | US | claimed |
| CN-104281006-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO | 2015-01-14 | — | — | CN | claimed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| EP-4219477-A1 | CYANOTRIAZOLE COMPOUNDS | Otsuka Pharmaceutical Co., Ltd. (JP) | 2023-08-02 | — | — | EP | disclosed |
| US-20230185191-A1 | COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-06-15 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| CN-115605458-A | Compound and method for producing same, acid generator, composition, resist film, underlayer film, pattern formation method, and optical article | 学校法人关西大学（JP） | 2023-01-13 | — | — | CN | disclosed |
| US-20220144738-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND METHOD FOR PURIFYING RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-05-12 | — | — | US | disclosed |
| US-20040224251-A1 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-11-11 | — | — | US | disclosed |
| US-20040191672-A1 | Resist composition | MITSUBISHI GAS CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| WO-2004074928-A2 | PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2004-09-02 | — | — | WO | disclosed |
| US-20040166433-A1 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. | 2004-08-26 | — | — | US | disclosed |
| EP-1443362-A2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-08-04 | — | — | EP | disclosed |
| US-20030236351-A1 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITIED (JP) | 2003-12-25 | — | — | US | disclosed |
| US-20030194639-A1 | Positive resist composition | FORTINET, INC. | 2003-10-16 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CA12 2546/4885CA1 1120/4885CA2 3332/4885 |
| US-20230185191-A1 | COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT | SOAT2, SOAT1, FAR1 | CA12 1227/4885CA1 635/4885CA2 1435/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CA12 1606/4885CA1 161/4885CA2 1466/4885 |
| US-20220144738-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND METHOD FOR PURIFYING RESIN | RER1, UNC119, FEM1B | CA12 3746/4885CA1 1483/4885CA2 3516/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.