Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1446079 | 0.97 | — | — | |
| SCHEMBL5681336 | 0.73 | CA12 (0.32) | — | |
| SCHEMBL26407960 | 0.71 | — | — | |
| Water SCHEMBL20657266 | 0.71 | — | — | |
| Water SCHEMBL8185636 | 0.71 | ALDH1A1 (0.32) | — | |
| SCHEMBL9498989 | 0.69 | TSHR (0.31) | — | |
| SCHEMBL28725509 | 0.69 | — | — | |
| SCHEMBL10874531 | 0.69 | CA12 (0.34) | — | |
| SCHEMBL1761172 | 0.69 | TSHR (0.33) | — | |
| SCHEMBL8890421 | 0.67 | DNM1 (0.40) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12481218-B2 | Treatment liquid, method for washing substrate, and method for removing resist | FUJIFILM CORPORATION (JP) | 2025-11-25 | — | — | US | disclosed |
| US-12386265-B2 | Pattern forming method and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2025-08-12 | — | — | US | disclosed |
| US-20250215318-A1 | ETCHING COMPOSITION, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2025-07-03 | — | — | US | disclosed |
| US-12276915-B2 | Treatment liquid and treatment method | FUJIFILM CORPORATION (JP) | 2025-04-15 | — | — | US | disclosed |
| US-20240295822-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2024-09-05 | — | — | US | disclosed |
| US-20240231237-A9 | TREATMENT LIQUID, METHOD FOR WASHING SUBSTRATE, AND METHOD FOR REMOVING RESIST | FUJIFILM CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-12013644-B2 | Method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-06-18 | — | — | US | disclosed |
| US-20240134284-A1 | TREATMENT LIQUID, METHOD FOR WASHING SUBSTRATE, AND METHOD FOR REMOVING RESIST | FUJIFILM CORPORATION (JP) | 2024-04-25 | — | — | US | disclosed |
| US-11899369-B2 | Treatment liquid, method for washing substrate, and method for removing resist | FUJIFILM CORPORATION (JP) | 2024-02-13 | — | — | US | disclosed |
| WO-2023204141-A1 | ETCHING COMPOSITION, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT | 東京応化工業株式会社 | 2023-10-26 | — | — | WO | disclosed |
| US-20220260919-A1 | TREATMENT LIQUID, METHOD FOR WASHING SUBSTRATE, AND METHOD FOR REMOVING RESIST | FUJIFILM CORPORATION (JP) | 2022-08-18 | — | — | US | disclosed |
| US-11397383-B2 | Treatment liquid, method for washing substrate, and method for removing resist | FUJIFILM CORPORATION (JP) | 2022-07-26 | — | — | US | disclosed |
| US-20220121123-A1 | METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2022-04-21 | — | — | US | disclosed |
| US-11256173-B2 | Treatment liquid for manufacturing semiconductor and pattern forming method | FUJIFILM CORPORATION (JP) | 2022-02-22 | — | — | US | disclosed |
| US-20200363725-A1 | TREATMENT LIQUID AND TREATMENT METHOD | FUJIFILM CORPORATION (JP) | 2020-11-19 | — | — | US | disclosed |
| US-20190079409-A1 | TREATMENT LIQUID, METHOD FOR WASHING SUBSTRATE, AND METHOD FOR REMOVING RESIST | FUJIFILM CORPORATION (JP) | 2019-03-14 | — | — | US | disclosed |
| US-20190025702-A1 | TREATMENT LIQUID FOR MANUFACTURING SEMICONDUCTOR AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2019-01-24 | — | — | US | disclosed |