SCHEMBL207124

SCHEMBL207124

CS(=O)(=O)OS(c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTR6 P50406 2/20 0.46
PSIP1 O75475 1/20 0.44
CA1 P00915 2/20 0.42
CA2 P00918 2/20 0.42
ALDH1A1 P00352 2/20 0.42
HSD17B10 Q99714 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
CA12 O43570 1/20 0.42
CA3 P07451 1/20 0.42
CA4 P22748 1/20 0.42
CA6 P23280 1/20 0.42
CA5A P35218 1/20 0.42
CA7 P43166 1/20 0.42
PLA2G7 Q13093 1/20 0.42
CA9 Q16790 1/20 0.42
CA13 Q8N1Q1 1/20 0.42
CA14 Q9ULX7 1/20 0.42
CA5B Q9Y2D0 1/20 0.42
TSHR P16473 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4365042 0.90 HTT (0.49) CA1CA2ALDH1A1TDP1CA12
SCHEMBL11051157 0.90 PTGS2 (0.48) CA1CA2ALDH1A1CA12CA9
SCHEMBL11052595 0.87 SOS1 (0.55) CA1CA2CA9SMN1; SMN2MMP1
SCHEMBL15063438 0.87 PKM (0.52) CA1CA2ALDH1A1TDP1CA4
SCHEMBL17557425 0.85 MMP13 (0.44) HTR6ALDH1A1MMP1MMP2MMP9
SCHEMBL7578519 0.85 ALDH1A1 (0.47) CA1CA2ALDH1A1HSD17B10TDP1
SCHEMBL9155335 0.84 SOS1 (0.56) CA1CA2ALDH1A1CA9TSHR
SCHEMBL8316984 0.82 PPARA (0.39) HTR6ALDH1A1TDP1SMN1; SMN2MMP2
SCHEMBL8320144 0.82 PPARA (0.39) HTR6ALDH1A1TDP1SMN1; SMN2MMP2
SCHEMBL8320055 0.82 CA12 (0.36) HTR6PSIP1CA1CA2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 300 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8313892-B2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2012-11-20 US claimed
US-8053158-B2 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-11-08 US claimed
US-20070202436-A1 Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-30 US claimed
EP-1612603-A2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2006-01-04 EP claimed
US-20050277055-A1 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2005-12-15 US claimed
US-6200480-B1 CONTACTING IMPURE SOLUTION OF PHOTOACID GENERATING COMPOUND CONTAINING TRACE AMOUNTS OF ACIDIC IMPURITIES WITH ANIONIC ION EXCHANGE RESIN CONTAINING PENDENT POLYAMINE FUNCTIONAL GROUPS FOR SUFFICIENT AMOUNT OF TIME TO REMOVE SAID IMPURITIES ARCH SPECIALTY CHEMICALS, INC. 2001-03-13 US claimed
EP-1054715-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS Olin Microelectronic Chemicals, Inc. (US) 2000-11-29 EP claimed
WO-1999036151-A1 METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS OLIN MICROELECTRONIC CHEMICALS, INC. (US) 1999-07-22 WO claimed
US-12493243-B2 Film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2025-12-09 US disclosed
US-12372875-B2 Composition for resist pattern metallization process NISSAN CHEMICAL CORPORATION (JP) 2025-07-29 US disclosed
US-12338309-B2 Dielectric film-forming composition FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2025-06-24 US disclosed
CN-113785243-B Composition for resist pattern metallization process 日产化学株式会社 2025-05-02 CN disclosed
WO-2025079705-A1 COPOLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN-FORMING MATERIAL, CURED PRODUCT, AND IMAGE DISPLAY DEVICE 大阪有機化学工業株式会社 2025-04-17 WO disclosed
US-20250123567-A1 POLYSILOXANE COMPOSITION MERCK ELECTRONICS KGAA (DE) 2025-04-17 US disclosed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed
US-5558971-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
US-5558976-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR, PHOTORESISTS WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed
EP-0665470-A2 Method for forming a fine pattern MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1995-08-02 EP disclosed