SCHEMBL207426

SCHEMBL207426

C=C(C)C(=O)OC1(C)CCSCC1

nearest known ligand 0.37

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.37
TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13900356 0.86 ALDH1A1 (0.44) ALDH1A1TSHR
SCHEMBL27945670 0.86 ALDH1A1 (0.44) ALDH1A1TSHR
SCHEMBL47313 0.82 ALDH1A1 (0.41) ALDH1A1TSHR
SCHEMBL673273 0.82 ALDH1A1 (0.41) ALDH1A1TSHR
SCHEMBL685576 0.80 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL6912158 0.80 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL1832545 0.80 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL685580 0.80 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL28137014 0.80 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL74808 0.80 ALDH1A1 (0.39) ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8846293-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same composition FUJIFILM CORPORATION (JP) 2014-09-30 US disclosed
US-8846293-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same composition FUJIFILM CORPORATION (JP) 2014-09-30 US disclosed
US-20120251948-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-10-04 US disclosed
US-20120251948-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-10-04 US disclosed
US-8088556-B2 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition FUJITSU LIMITED (JP) 2012-01-03 US disclosed
US-8088556-B2 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition FUJITSU LIMITED (JP) 2012-01-03 US disclosed
US-8088556-B2 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition FUJITSU LIMITED (JP) 2012-01-03 US disclosed
US-8080365-B2 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition FUJITSU LIMITED (JP) 2011-12-20 US disclosed
US-8080365-B2 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition FUJITSU LIMITED (JP) 2011-12-20 US disclosed
US-8080365-B2 Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition FUJITSU LIMITED (JP) 2011-12-20 US disclosed
US-7897321-B2 Monomer, resin, resist composition using the resin, and method producing semiconductor device using the resist composition FUJITSU LIMITED (JP) 2011-03-01 US disclosed
US-20100248154-A1 THIOPYRAN DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION FUJITSU LIMITED (JP) 2010-09-30 US disclosed
US-20100248154-A1 THIOPYRAN DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION FUJITSU LIMITED (JP) 2010-09-30 US disclosed
US-20100248154-A1 THIOPYRAN DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION FUJITSU LIMITED (JP) 2010-09-30 US disclosed
US-20100227275-A1 THIOPYRAN DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION FUJITSU LIMITED (JP) 2010-09-09 US disclosed
US-20100227275-A1 THIOPYRAN DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION FUJITSU LIMITED (JP) 2010-09-09 US disclosed
US-20100227275-A1 THIOPYRAN DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION FUJITSU LIMITED (JP) 2010-09-09 US disclosed
US-20090191485-A1 MONOMER, RESIN, RESIST COMPOSITION USING THE RESIN, AND METHOD PRODUCING SEMICONDUCTOR DEVICE USING THE RESIST COMPOSITION FUJITSU LIMITED (JP) 2009-07-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090191485-A1 MONOMER, RESIN, RESIST COMPOSITION USING THE RESIN, AND METHOD PRODUCING SEMICONDUCTOR DEVICE USING THE RESIST COMPOSITION AFF1, AFF4, RER1 ALDH1A1 1915/4885TSHR 1359/4885
US-20100227275-A1 THIOPYRAN DERIVATIVE, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SUCH RESIST COMPOSITION TST, RPS4Y1, TERT ALDH1A1 2109/4885TSHR 198/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.