SCHEMBL2102663

SCHEMBL2102663

CCC([SiH3])c1cccc(Cl)c1N(C)C

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NISCH Q9Y2I1 1/20 0.38
AOC3 Q16853 1/20 0.36
CFD P00746 1/20 0.36
CYP1A2 P05177 1/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
NFKB1 P19838 1/20 0.34
PNMT P11086 1/20 0.34
LMNA P02545 2/20 0.33
ALDH1A1 P00352 2/20 0.33
GLA P06280 1/20 0.33
NPC1 O15118 1/20 0.32
HTT P42858 1/20 0.32
RAB9A P51151 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
TAS1R3 Q7RTX0 1/20 0.30
TAS1R1 Q7RTX1 1/20 0.30
TAS1R2 Q8TE23 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102669 0.85 CYP1A2 (0.33) NISCHAOC3CFDCYP1A2CYP3A4
SCHEMBL2102728 0.81 MAPT (0.35) CYP1A2LMNAALDH1A1HTT
SCHEMBL2102355 0.78 PNMT (0.52) NISCHAOC3CFDCYP1A2CYP3A4
SCHEMBL2272069 0.77 NISCH (0.44) NISCHAOC3CYP1A2CYP3A4CYP2D6
SCHEMBL2102181 0.72 CXCL8 (0.35) NISCHCYP1A2CYP3A4CYP2D6NFKB1
SCHEMBL16746561 0.72 CYP1A2 (0.43) NISCHAOC3CYP1A2CYP3A4CYP2D6
SCHEMBL2103218 0.71 CXCL8 (0.34) NISCHCYP1A2CYP3A4CYP2D6NFKB1
SCHEMBL2272421 0.71 MAPT (0.35) NISCHAOC3CYP1A2LMNAALDH1A1
SCHEMBL9233119 0.70 TSHR (0.44) LMNASLC6A2SLC6A4TAAR1
SCHEMBL2104387 0.69 ALDH1A1 (0.30) CYP3A4ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed