SCHEMBL21192545

SCHEMBL21192545

C=CCc1cc(C(c2ccc(OC#N)c(CC=C)c2)(C(F)(F)F)C(F)(F)F)ccc1OC#N

nearest known ligand 0.32

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
ALOX5 P09917 3/20 0.32
GABRA1 P14867 2/20 0.32
GABRB2 P47870 2/20 0.32
CNR2 P34972 1/20 0.32
AR P10275 1/20 0.32
PTGDR Q13258 1/20 0.32
PTGDR2 Q9Y5Y4 1/20 0.32
ELANE P08246 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3420813 0.83 ELANE (0.36) ALOX5GABRA1GABRB2CNR2PTGDR
SCHEMBL29664254 0.83 ELANE (0.36) ALOX5GABRA1GABRB2CNR2PTGDR
SCHEMBL16255461 0.79 PTGDR (0.41) GABRA1GABRB2CNR2PTGDRPTGDR2
SCHEMBL16393687 0.78 ELANE (0.35) ALOX5GABRA1GABRB2CNR2PTGDR
SCHEMBL7608902 0.77 ESR1 (0.36) GABRA1GABRB2
SCHEMBL30417022 0.76 MAPT (0.38) ALOX5GABRA1GABRB2CNR2PTGDR
SCHEMBL9419416 0.75 KMT2A (0.40) ALOX5GABRA1GABRB2CNR2PTGDR
SCHEMBL21192542 0.75 MAPT (0.37) ALOX5GABRA1GABRB2CNR2PTGDR
SCHEMBL8993094 0.75 GABRA1 (0.41) ALOX5GABRA1GABRB2CNR2AR
SCHEMBL14591648 0.75 PTPN1 (0.34) ALOX5GABRA1GABRB2CNR2PTGDR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20210070685-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-11 US disclosed
US-20210070727-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-11 US disclosed
US-20210070683-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-11 US disclosed
US-20210047457-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-02-18 US disclosed
US-20210003921-A1 COMPOUND, RESIN, COMPOSITION, AND FILM FORMING MATERIAL FOR LITHOGRAPHY USING THE SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-01-07 US disclosed
EP-3760611-A1 COMPOUND, RESIN, COMPOSITION AND FILM-FORMING MATERIAL FOR LITHOGRAPHY USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-01-06 EP disclosed
EP-3747857-A1 COMPOUND, RESIN, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND METHOD FOR PURIFYING RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-09 EP disclosed
EP-3744710-A1 COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-02 EP disclosed
US-20200361843-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD AND METHOD FOR PURIFYING RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-11-19 US disclosed
US-20200247739-A1 COMPOUND, RESIN, COMPOSITION, PATTERN FORMATION METHOD, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-08-06 US disclosed
CN-110198924-A Compound, resin, composition and pattern forming method 三菱瓦斯化学株式会社 2019-09-03 CN disclosed
EP-3517522-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2019-07-31 EP disclosed
CN-110023276-A Compound, resin, composition and corrosion-resisting pattern forming method and circuit pattern forming method 三菱瓦斯化学株式会社 2019-07-16 CN disclosed
CN-110023277-A Compound, resin, composition and corrosion-resisting pattern forming method and circuit pattern forming method 三菱瓦斯化学株式会社 2019-07-16 CN disclosed
CN-109790097-A Compound, resin, composition and corrosion-resisting pattern forming method and circuit pattern forming method 三菱瓦斯化学株式会社 2019-05-21 CN disclosed
CN-109715591-A Compound, resin, composition and corrosion-resisting pattern forming method and circuit pattern forming method 三菱瓦斯化学株式会社 2019-05-03 CN disclosed
CN-109476580-A Compound, resin, composition and pattern forming method 三菱瓦斯化学株式会社 2019-03-15 CN disclosed
CN-109476575-A Compound, resin, composition and corrosion-resisting pattern forming method and circuit pattern forming method 三菱瓦斯化学株式会社 2019-03-15 CN disclosed
CN-109476576-A Compound, resin, composition, resist pattern forming method, and circuit pattern forming method 三菱瓦斯化学株式会社 2019-03-15 CN disclosed
CN-109415286-A COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD 三菱瓦斯化学株式会社 2019-03-01 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20210070683-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD RER1, RTN4, FEM1B ALOX5 205/4885GABRA1 338/4885GABRB2 439/4885
US-20210003921-A1 COMPOUND, RESIN, COMPOSITION, AND FILM FORMING MATERIAL FOR LITHOGRAPHY USING THE SAME COL1A1, MLLT3, F12 ALOX5 1026/4885GABRA1 1717/4885GABRB2 3114/4885
US-20200361843-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD AND METHOD FOR PURIFYING RESIN C5, C9, C1R ALOX5 191/4885GABRA1 272/4885GABRB2 516/4885
US-20210070727-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD RDX, RTN4, CROCC ALOX5 430/4885GABRA1 2611/4885GABRB2 2727/4885
US-20210070685-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD RER1, RTN4, FEM1B ALOX5 205/4885GABRA1 338/4885GABRB2 439/4885
US-20200247739-A1 COMPOUND, RESIN, COMPOSITION, PATTERN FORMATION METHOD, AND PURIFICATION METHOD CROCC, RDX, RBBP9 ALOX5 273/4885GABRA1 3728/4885GABRB2 4339/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.