SCHEMBL217715

SCHEMBL217715

Cc1cc(O)cc2c1C(C)(C)CC21CC(C)(C)c2c(C)cc(O)cc21

nearest known ligand 0.35

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.35
CHRM1 P11229 1/20 0.35
ALOX15 P16050 1/20 0.35
MAOA P21397 1/20 0.35
TBXA2R P21731 1/20 0.35
ADRA1A P35348 1/20 0.35
HTR2B P41595 1/20 0.35
MEN1 O00255 1/20 0.33
HSP90AA1 P07900 1/20 0.33
KMT2A Q03164 1/20 0.33
ATM Q13315 1/20 0.33
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11152989 0.86 ACHE (0.37) CYP3A4CHRM1ALOX15MAOATBXA2R
SCHEMBL4460425 0.81 CYP3A4 (0.38) CYP3A4CHRM1ALOX15MAOATBXA2R
SCHEMBL18786904 0.78 ACHE (0.35) CYP3A4CHRM1ALOX15MAOATBXA2R
SCHEMBL4469324 0.77 CYP3A4 (0.42) CYP3A4MEN1KMT2AALDH1A1
SCHEMBL15064935 0.73 SRC (0.34) ALDH1A1
SCHEMBL3919468 0.71 TP53 (0.31)
SCHEMBL8015643 0.69 CYP3A4 (0.38) CYP3A4CHRM1ALOX15MAOATBXA2R
SCHEMBL18804768 0.68 ACHE (0.40) CYP3A4MEN1HSP90AA1KMT2AATM
SCHEMBL169731 0.68 OPRM1 (0.39) CYP3A4ALOX15MEN1KMT2AALDH1A1
SCHEMBL29914192 0.68 OPRM1 (0.39) CYP3A4ALOX15MEN1KMT2AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 173 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7303855-B2 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-04 US claimed
US-20060019195-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-26 US claimed
US-20240242967-A1 Polymer For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-18 US disclosed
EP-4398037-A1 COMPOUND FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-10 EP disclosed
US-12032293-B2 Composition for forming organic film, patterning process, and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
EP-4390547-A1 POLYMER FOR FORMING METAL-CONTAINING FILM, COMPOSITION FOR FORMING METAL-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-26 EP disclosed
EP-3835380-B1 MATERIAL FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND SHINETSU CHEMICAL CO (JP) 2024-04-24 EP disclosed
EP-3764162-B1 COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER SHINETSU CHEMICAL CO (JP) 2024-04-17 EP disclosed
US-20240116958-A1 Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, Patterning Process, And Semiconductor Photoresist Material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-04-11 US disclosed
EP-4155337-B1 COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND AND POLYMER FOR FORMING ORGANIC FILM SHINETSU CHEMICAL CO (JP) 2024-02-21 EP disclosed
EP-4163279-B1 MATERIAL FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND SHINETSU CHEMICAL CO (JP) 2024-01-31 EP disclosed
US-20070275325-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-29 US disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-20060204891-A1 Etching resistance; novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-09-14 US disclosed
US-20060046065-A1 Optical unit using plastic lenses FUJI PHOTO FILM CO., LTD. 2006-03-02 US disclosed
US-20060019195-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-26 US disclosed
US-6080522-A CONTAINING PHOTORESIST AND POLYMER CLARIANT INTERNAITONAL, LTD. (CH) 2000-06-27 US disclosed
US-6028161-A EXCELLENT TRANSPARENCY, HEAT RESISTANCE AND MECHANICAL PROPERTIES AND A LOW BIREFRINGENCE, MELT FLUIDITY AND MOLDABILITY; AN OPTICAL DISK, LENS AND AN OPTICAL FIBER MITSUI CHEMICALS, INC. (JP) 2000-02-22 US disclosed
EP-0926180-A2 A polycarbonate copolymer and applications thereof Mitsui Chemicals, Inc. (JP) 1999-06-30 EP disclosed
EP-0922998-A1 RADIATION-SENSITIVE RESIST COMPOSITION WITH HIGH HEAT RESISTANCE Clariant International Ltd. (CH) 1999-06-16 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20240116958-A1 Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, Patterning Process, And Semiconductor Photoresist Material FEM1B, ASH2L, MSI2 CYP3A4 4279/4885CHRM1 170/4885ALOX15 1487/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.