Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Oxalic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LDHA | P00338 | 2/20 | 0.42 |
| ▸ | LDHB | P07195 | 2/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.41 |
| ▸ | MAPT | P10636 | 3/20 | 0.41 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.41 |
| ▸ | USP2 | O75604 | 1/20 | 0.41 |
| ▸ | HPGD | P15428 | 1/20 | 0.41 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.41 |
| ▸ | RECQL | P46063 | 1/20 | 0.41 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.41 |
| ▸ | BCL2 | P10415 | 1/20 | 0.41 |
| ▸ | BCL2L1 | Q07817 | 1/20 | 0.41 |
| ▸ | PTGDR2 | Q9Y5Y4 | 1/20 | 0.40 |
| ▸ | GAA | P10253 | 3/20 | 0.39 |
| ▸ | MEN1 | O00255 | 2/20 | 0.39 |
| ▸ | LMNA | P02545 | 2/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.39 |
| ▸ | POLB | P06746 | 1/20 | 0.39 |
| ▸ | CNR2 | P34972 | 1/20 | 0.39 |
| ▸ | GPR55 | Q9Y2T6 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Bicarbonate SCHEMBL22188469 | 0.95 | LDHA (0.43) | LDHALDHBALDH1A1MAPTNPSR1 | |
| SCHEMBL22188467 | 0.92 | BCL2 (0.42) | LDHALDHBALDH1A1MAPTNPSR1 | |
| Malonic Acid SCHEMBL22188497 | 0.91 | PTGDR2 (0.41) | LDHALDHBALDH1A1MAPTNPSR1 | |
| Fumaric Acid SCHEMBL22188521 | 0.90 | HRH1 (0.43) | LDHALDHBALDH1A1MAPTNPSR1 | |
| Maleic Acid SCHEMBL22188519 | 0.90 | HRH1 (0.43) | LDHALDHBALDH1A1MAPTNPSR1 | |
| Citric Acid SCHEMBL22188536 | 0.84 | LMNA (0.48) | LDHALDHBALDH1A1PTGDR2MEN1 | |
| Oxalic Acid SCHEMBL22188492 | 0.81 | ALDH1A1 (0.43) | LDHALDHBALDH1A1MAPTNPSR1 | |
| SCHEMBL3970500 | 0.80 | BCL2 (0.41) | LDHALDHBBCL2BCL2L1CNR2 | |
| SCHEMBL7904072 | 0.78 | BCL2 (0.45) | LDHALDHBALDH1A1MAPTNPSR1 | |
| SCHEMBL27892158 | 0.77 | BCL2 (0.60) | LDHALDHBALDH1A1MAPTNPSR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-20240319598-A1 | Composition For Forming Silicon-Containing Resist Underlayer Film And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-09-26 | — | — | US | disclosed |
| EP-4435515-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-09-25 | — | — | EP | disclosed |
| EP-3680275-B1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-06 | — | — | EP | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| EP-4250008-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-27 | — | — | EP | disclosed |
| EP-4020081-B1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND | SHINETSU CHEMICAL CO (JP) | 2023-05-17 | — | — | EP | disclosed |
| CN-111855581-B | Method for determining diffusion distance of hardening catalyst | 信越化学工业株式会社 | 2023-04-14 | — | — | CN | disclosed |
| US-11592287-B2 | Method for measuring distance of diffusion of curing catalyst | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-02-28 | — | — | US | disclosed |
| CN-111855581-A | Method for determining diffusion distance of hardening catalyst | 信越化学工业株式会社 | 2020-10-30 | — | — | CN | disclosed |
| CN-111856882-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2020-10-30 | — | — | CN | disclosed |
| US-20200341377-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-29 | — | — | US | disclosed |
| US-20200340806-A1 | METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-29 | — | — | US | disclosed |
| EP-3731017-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-10-28 | — | — | EP | disclosed |
| CN-111458980-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2020-07-28 | — | — | CN | disclosed |
| CN-111423587-A | Thermosetting silicon-containing compound, composition for forming silicon-containing film, and method for forming pattern | 信越化学工业株式会社 | 2020-07-17 | — | — | CN | disclosed |
| EP-3680275-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-07-15 | — | — | EP | disclosed |
| US-20200216670-A1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-09 | — | — | US | disclosed |
| CN-111208710-A | Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method | 信越化学工业株式会社 | 2020-05-29 | — | — | CN | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | LDHA 4100/4885LDHB 4142/4885ALDH1A1 1586/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | LDHA 4837/4885LDHB 4829/4885ALDH1A1 4452/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.