Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.44 |
| ▸ | LMNA | P02545 | 1/20 | 0.44 |
| ▸ | PPARG | P37231 | 1/20 | 0.43 |
| ▸ | HTT | P42858 | 2/20 | 0.43 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.43 |
| ▸ | ENPP2 | Q13822 | 3/20 | 0.43 |
| ▸ | MEN1 | O00255 | 3/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.42 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.41 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.41 |
| ▸ | CA12 | O43570 | 2/20 | 0.41 |
| ▸ | CA2 | P00918 | 2/20 | 0.41 |
| ▸ | MAPT | P10636 | 1/20 | 0.41 |
| ▸ | VDR | P11473 | 1/20 | 0.40 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.40 |
| ▸ | ENPP3 | O14638 | 2/20 | 0.40 |
| ▸ | ENPP1 | P22413 | 2/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Diphenylsulfane SCHEMBL2897533 | 0.88 | PPARG (0.45) | TDP1ALDH1A1LMNAPPARGHTT | |
| Biphenyl SCHEMBL22631536 | 0.88 | CA12 (0.50) | TDP1ALDH1A1LMNAPPARGHTT | |
| Iodobenzene SCHEMBL2902285 | 0.85 | LMNA (0.56) | TDP1ALDH1A1LMNAPPARGHTT | |
| SCHEMBL482368 | 0.84 | TDP1 (0.46) | TDP1ALDH1A1LMNAPPARGHTT | |
| SCHEMBL28637991 | 0.84 | TDP1 (0.61) | TDP1ALDH1A1LMNAHTTSMN1; SMN2 | |
| Iodobenzene SCHEMBL2895552 | 0.83 | ALDH1A1 (0.53) | TDP1ALDH1A1LMNAHTTSMN1; SMN2 | |
| SCHEMBL3100955 | 0.82 | MEN1 (0.53) | ALDH1A1LMNAPPARGHTTSMN1; SMN2 | |
| SCHEMBL8057975 | 0.82 | MEN1 (0.53) | ALDH1A1LMNAPPARGHTTSMN1; SMN2 | |
| SCHEMBL384726 | 0.81 | ALDH1A1 (0.40) | TDP1ALDH1A1LMNAPPARGHTT | |
| SCHEMBL5709656 | 0.81 | ENPP2 (0.44) | ALDH1A1LMNAPPARGHTTSMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120019045-A | Compound, composition, cured product, method for producing cured product, and method for producing electronic component | 株式会社艾迪科 | 2025-05-16 | — | — | CN | disclosed |
| CN-119816784-A | Fabrication of integrated circuits using positive photo-patternable dielectrics comprising high silicon content polysilsesquioxanes | 潍坊星泰克微电子材料有限公司 | 2025-04-11 | — | — | CN | disclosed |
| CN-119631021-A | Photolithography method using silicon photoresist | 潍坊星泰克微电子材料有限公司 | 2025-03-14 | — | — | CN | disclosed |
| EP-4508493-A1 | PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST | Suntific Materials (Weifang), Ltd. (CN) | 2025-02-19 | — | — | EP | disclosed |
| EP-4508495-A1 | MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE | Suntific Materials (Weifang), Ltd. (CN) | 2025-02-19 | — | — | EP | disclosed |
| CN-111198480-B | Photosensitive resin composition, pattern forming method and antireflection film | 信越化学工业株式会社 | 2025-02-11 | — | — | CN | disclosed |
| WO-2025000535-A1 | MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE | SUNTIFIC MATERIALS (WEIFANG), LTD. (CN) | 2025-01-02 | — | — | WO | disclosed |
| WO-2025000537-A1 | PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST | SUNTIFIC MATERIALS (WEIFANG), LTD. (CN) | 2025-01-02 | — | — | WO | disclosed |
| CN-109976091-B | Photosensitive resin composition, pattern forming method, and manufacture of optoelectronic semiconductor device | 信越化学工业株式会社 | 2024-09-27 | — | — | CN | disclosed |
| CN-118103774-A | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, and pattern forming method | 信越化学工业株式会社 | 2024-05-28 | — | — | CN | disclosed |
| CN-111045292-A | Photosensitive resin composition, photosensitive dry film and pattern forming method | 信越化学工业株式会社 | 2020-04-21 | — | — | CN | disclosed |
| CN-110727175-A | Photosensitive resin composition and pattern forming method | 信越化学工业株式会社 | 2020-01-24 | — | — | CN | disclosed |
| CN-110727174-A | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film and black matrix | 信越化学工业株式会社 | 2020-01-24 | — | — | CN | disclosed |
| CN-110637256-A | Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method | 三菱瓦斯化学株式会社 | 2019-12-31 | — | — | CN | disclosed |
| US-9805943-B2 | Polymer for resist under layer film composition, resist under layer film composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-31 | — | — | US | disclosed |
| EP-1645909-B1 | Photo-curable resin composition comprising a polyimide, a process for forming a pattern therewith, and a substrate protecting film | SHINETSU CHEMICAL CO (JP) | 2011-08-24 | — | — | EP | disclosed |
| US-RE41580-E1 | Lactone-containing compounds, polymers, resist compositions, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-24 | — | — | US | disclosed |
| EP-1645909-A2 | Photo-curable resin composition comprising a polyimide, a process for forming a pattern therewith, and a substrate protecting film | Shin-Etsu Chemical Co., Ltd. (JP) | 2006-04-12 | — | — | EP | disclosed |
| US-20020147290-A1 | Cyclic acetal compound, polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-10 | — | — | US | disclosed |
| US-6156481-A | WITH HYDROXYSTYRENE-(METH)ACRYLIC ACID OR (METH)ACRYLATE COPOLYMER WHERE SOME PHENOLIC HYDROXYL GROUPS ARE CROSSLINKED WITH ETHER CONTAINING ACID LABILE GROUPS; DISSOLUTION INHIBITION AND INCREASED DISSOLUTION CONTRAST AFTER EXPOSURE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-12-05 | — | — | US | disclosed |