SCHEMBL244495

SCHEMBL244495

CC(C)(C)Oc1cccc(-c2cccc(S)c2-c2cccc(OC(C)(C)C)c2)c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.40
MEN1 O00255 1/20 0.40
ALDH1A1 P00352 1/20 0.40
HPGD P15428 1/20 0.40
KMT2A Q03164 1/20 0.40
NPSR1 Q6W5P4 1/20 0.40
PRKDC P78527 1/20 0.40
AKR1C3 P42330 2/20 0.34
AKR1C2 P52895 2/20 0.34
AKR1C4 P17516 1/20 0.34
AKR1C1 Q04828 1/20 0.34
ADORA2A P29274 1/20 0.34
ADORA1 P30542 1/20 0.34
KIF11 P52732 1/20 0.33
CETP P11597 2/20 0.32
CNR1 P21554 1/20 0.32
CNR2 P34972 1/20 0.32
HSP90AA1 P07900 1/20 0.32
HSP90AB1 P08238 1/20 0.32
KCNH2 Q12809 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4085688 0.87 PRKDC (0.34) KDM4EMEN1ALDH1A1HPGDKMT2A
SCHEMBL1263081 0.87 KDM4E (0.42) KDM4EMEN1ALDH1A1HPGDKMT2A
SCHEMBL8078749 0.83 MAOB (0.36) KDM4EMEN1ALDH1A1HPGDKMT2A
SCHEMBL8645387 0.83 AKR1C3 (0.38) PRKDCAKR1C3AKR1C2AKR1C4AKR1C1
SCHEMBL8644650 0.82 PRKDC (0.35) PRKDCAKR1C3AKR1C2AKR1C4AKR1C1
SCHEMBL246926 0.81 PPARG (0.38) KIF11
SCHEMBL243271 0.80 ATM (0.35) NPSR1KCNH2
SCHEMBL8322205 0.79 ELANE (0.44) AKR1C3AKR1C2AKR1C4AKR1C1HSP90AA1
Hydrogen Sulfide SCHEMBL27607409 0.77 KDM4E (0.43) KDM4EMEN1ALDH1A1HPGDKMT2A
SCHEMBL8318362 0.76 PTPN1 (0.47) MEN1ALDH1A1HPGDKMT2ANPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 595 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
US-9075306-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-07 US claimed
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP claimed
EP-1780199-B1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2012-02-01 EP claimed
EP-1780198-B1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2011-10-05 EP claimed
US-20260093177-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-02 US disclosed
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-27 US disclosed
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4202548-B1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHINETSU CHEMICAL CO (JP) 2025-11-19 EP disclosed
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP disclosed
US-12351742-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-08 US disclosed
US-20010036593-A1 Chemical amplification type resist composition SHIN-ETSU CHEMICAL CO., LTD. 2001-11-01 US disclosed
US-20010033994-A1 Chemical amplification, positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-20010031421-A1 Chemical amplification resist compositions SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-10-18 US disclosed
EP-1136885-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-26 EP disclosed
EP-1117003-A1 Chemical amplification type resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2001-07-18 EP disclosed
EP-1077391-A1 Onium salts, photoacid generators for resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-02-21 EP disclosed
US-5880169-A HAVING HIGH RESOLUTION FOR FINE PATTERNING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260093177-A1 PATTERNING PROCESS ARFGAP1, ARF1, ARF4 KDM4E 589/4885MEN1 502/4885ALDH1A1 2715/4885
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film RAD51, CDH1, SMC2 KDM4E 1678/4885MEN1 2010/4885ALDH1A1 1225/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.