Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.41 |
| ▸ | TSHR | P16473 | 4/20 | 0.41 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.41 |
| ▸ | ALOX15 | P16050 | 2/20 | 0.41 |
| ▸ | SLC2A1 | P11166 | 2/20 | 0.38 |
| ▸ | APP | P05067 | 5/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.34 |
| ▸ | TP53 | P04637 | 3/20 | 0.34 |
| ▸ | MAPK1 | P28482 | 3/20 | 0.34 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.34 |
| ▸ | MAPT | P10636 | 4/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.33 |
| ▸ | NOX1 | Q9Y5S8 | 1/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 2/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8323353 | 1.00 | ALDH1A1 (0.41) | ALDH1A1TSHRHSD17B10ALOX15SLC2A1 | |
| SCHEMBL5609606 | 1.00 | ALDH1A1 (0.41) | ALDH1A1TSHRHSD17B10ALOX15SLC2A1 | |
| SCHEMBL8593634 | 0.93 | ALDH1A1 (0.37) | ALDH1A1TSHRHSD17B10ALOX15SLC2A1 | |
| SCHEMBL8324853 | 0.89 | ALDH1A1 (0.36) | ALDH1A1TSHRHSD17B10ALOX15SLC2A1 | |
| SCHEMBL8318829 | 0.89 | ALDH1A1 (0.36) | ALDH1A1TSHRHSD17B10ALOX15SLC2A1 | |
| SCHEMBL245948 | 0.86 | SLC6A2 (0.37) | CYP3A4MAPTKDM4EMEN1KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL8494445 | 0.85 | CA2 (0.34) | ALDH1A1HSD17B10ALOX15SLC2A1TDP1 | |
| Trifluoromethanesulfonic Acid SCHEMBL8078870 | 0.85 | HSP90AA1 (0.34) | ALDH1A1TSHRHSD17B10ALOX15MAPT | |
| Trifluoromethanesulfonic Acid SCHEMBL8069550 | 0.85 | HSP90AA1 (0.34) | ALDH1A1TSHRHSD17B10ALOX15MAPT | |
| Hydrochloric Acid SCHEMBL8632732 | 0.84 | SLC6A2 (0.36) | CYP3A4MAPTKDM4EMEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 610 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| US-9075306-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-07 | — | — | US | claimed |
| EP-1710230-B1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-08-14 | — | — | EP | claimed |
| EP-1780199-B1 | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-02-01 | — | — | EP | claimed |
| EP-1780198-B1 | Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2011-10-05 | — | — | EP | claimed |
| US-6440634-B1 | MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2002-08-27 | — | — | US | claimed |
| US-5569784-A | FINE PATTERN; PREVENTS POST-EXPOSURE DELAY | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1996-10-29 | — | — | US | claimed |
| US-20260093177-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-02 | — | — | US | disclosed |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-27 | — | — | US | disclosed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4202548-B1 | MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM | SHINETSU CHEMICAL CO (JP) | 2025-11-19 | — | — | EP | disclosed |
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| US-5880169-A | HAVING HIGH RESOLUTION FOR FINE PATTERNING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-03-09 | — | — | US | disclosed |
| EP-0667338-B1 | Sulfonium salt and resist composition | SHINETSU CHEMICAL CO (JP) | 1998-01-07 | — | — | EP | disclosed |
| US-5569784-A | FINE PATTERN; PREVENTS POST-EXPOSURE DELAY | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1996-10-29 | — | — | US | disclosed |
| EP-0667338-A1 | Sulfonium salt and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1995-08-16 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260093177-A1 | PATTERNING PROCESS | ARFGAP1, ARF1, ARF4 | ALDH1A1 2715/4885TSHR 2852/4885HSD17B10 3434/4885 |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | RAD51, CDH1, SMC2 | ALDH1A1 1225/4885TSHR 3629/4885HSD17B10 1442/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.