Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC6A2 | P23975 | 1/20 | 0.37 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.37 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.37 |
| ▸ | ACACB | O00763 | 2/20 | 0.37 |
| ▸ | KIF11 | P52732 | 1/20 | 0.36 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 2/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.32 |
| ▸ | PPARA | Q07869 | 2/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | PPARG | P37231 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL8317302 | 0.98 | SLC6A2 (0.36) | SLC6A2SLC6A4SLC6A3ACACBKIF11 | |
| Hydrochloric Acid SCHEMBL8632732 | 0.98 | SLC6A2 (0.36) | SLC6A2SLC6A4SLC6A3ACACBKIF11 | |
| SCHEMBL246925 | 0.91 | KIF11 (0.40) | SLC6A2SLC6A4SLC6A3ACACBKIF11 | |
| SCHEMBL6367283 | 0.91 | ACHE (0.39) | SLC6A2SLC6A4SLC6A3ACACBKIF11 | |
| SCHEMBL246587 | 0.91 | KIF11 (0.40) | SLC6A2SLC6A4SLC6A3ACACBKIF11 | |
| SCHEMBL6117890 | 0.89 | NFE2L2 (0.34) | SLC6A2SLC6A4SLC6A3ACACBKIF11 | |
| Hydrochloric Acid SCHEMBL482291 | 0.89 | KIF11 (0.39) | SLC6A2SLC6A4SLC6A3ACACBKIF11 | |
| Bromide SCHEMBL1923006 | 0.89 | KIF11 (0.39) | SLC6A2SLC6A4SLC6A3ACACBKIF11 | |
| SCHEMBL6117266 | 0.89 | NFE2L2 (0.34) | SLC6A2SLC6A4SLC6A3ACACBKIF11 | |
| SCHEMBL248025 | 0.86 | ALDH1A1 (0.41) | MEN1KMT2AKDM4ECYP3A4MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 826 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| US-9075306-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-07 | — | — | US | claimed |
| EP-1710230-B1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-08-14 | — | — | EP | claimed |
| EP-1780199-B1 | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-02-01 | — | — | EP | claimed |
| EP-1780198-B1 | Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2011-10-05 | — | — | EP | claimed |
| EP-0665220-B1 | Novel sulfonium salt and chemically amplified positive resist composition | SHINETSU CHEMICAL CO (JP) | 1999-04-07 | — | — | EP | claimed |
| US-5624787-A | NITROGENOUS COMPOUND AND SULFONIUM COMPOUND FOR POSITIVE PHOTORESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-04-29 | — | — | US | claimed |
| US-20260093177-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-02 | — | — | US | disclosed |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-27 | — | — | US | disclosed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4202548-B1 | MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM | SHINETSU CHEMICAL CO (JP) | 2025-11-19 | — | — | EP | disclosed |
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | disclosed |
| US-5880169-A | HAVING HIGH RESOLUTION FOR FINE PATTERNING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-03-09 | — | — | US | disclosed |
| US-5705702-A | REACTING AN ARYL GRIGNARD REAGENT WITH THIONYL CHLORIDE, THEN WITH TRIORGANOSILYL SULFONATE OR TRIORGANOSILYLHALIDE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-01-06 | — | — | US | disclosed |
| US-5691112-A | P-TOLUENESULFONIC ACID TRIS(P-TERT-BUTOXYPHENYL) SULFONIUM AS PHOTOSENSITIVE ACID GENERATOR; FORMING SOLUBLE SURFACE LAYER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-11-25 | — | — | US | disclosed |
| US-5633409-A | POSITIVE RESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-05-27 | — | — | US | disclosed |
| US-5624787-A | NITROGENOUS COMPOUND AND SULFONIUM COMPOUND FOR POSITIVE PHOTORESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-04-29 | — | — | US | disclosed |
| EP-0665220-A1 | Novel sulfonium salt and chemically amplified positive resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1995-08-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260093177-A1 | PATTERNING PROCESS | ARFGAP1, ARF1, ARF4 | SLC6A2 4718/4885SLC6A4 4222/4885SLC6A3 4665/4885 |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | RAD51, CDH1, SMC2 | SLC6A2 2462/4885SLC6A4 3694/4885SLC6A3 3839/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.