SCHEMBL24995298

SCHEMBL24995298

CC(C)(C)OC(O)c1cc(-c2ccccc2)c(S(=O)(=O)O)c(-c2ccccc2)c1

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ SLC9A1 P19634 1/20 0.32
▸ PTGS2 P35354 4/20 0.31
▸ KMT2A Q03164 4/20 0.31
▸ PTGS1 P23219 3/20 0.31
▸ MEN1 O00255 3/20 0.31
▸ LMNA P02545 3/20 0.31
▸ HPGD P15428 3/20 0.31
▸ MAPT P10636 2/20 0.31
▸ FABP2 P12104 1/20 0.31
▸ TSHR P16473 1/20 0.31
▸ AKR1C4 P17516 1/20 0.31
▸ ADRA2B P18089 1/20 0.31
▸ CHRM3 P20309 1/20 0.31
▸ HTR2C P28335 1/20 0.31
▸ DRD3 P35462 1/20 0.31
▸ AKR1C3 P42330 1/20 0.31
▸ AKR1C2 P52895 1/20 0.31
▸ AKR1C1 Q04828 1/20 0.31
▸ SLC22A6 Q4U2R8 1/20 0.31
▸ CYP1A2 P05177 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23432939 0.73 CA12 (0.43) PTGS2LMNATSHRALDH1A1TDP1
SCHEMBL21794265 0.71 PTPN1 (0.47) PTGS2KMT2APTGS1MEN1LMNA
SCHEMBL28313752 0.71 RIPK1 (0.44) KMT2ALMNAHIF1AALDH1A1KDM4E
SCHEMBL25006128 0.70 BACE1 (0.35) PTGS2KMT2AHPGDMAPTCYP1A2
SCHEMBL21794269 0.70 ALDH1A1 (0.48) KMT2AMEN1HPGDMAPTTSHR
SCHEMBL24581543 0.69 CA12 (0.52) PTGS2MAPTTSHRALDH1A1KDM4E
SCHEMBL21794264 0.68 TSHR (0.46) SLC9A1PTGS2KMT2AHPGDTSHR
SCHEMBL31115301 0.67 PGAM1 (0.40) PTGS2KMT2AMEN1LMNAHPGD
SCHEMBL1443131 0.67 PGAM1 (0.40) PTGS2KMT2AMEN1LMNAHPGD
SCHEMBL21794139 0.65 MMP3 (0.52) KMT2AMEN1LMNAMAPTPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4130878-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK FUJIFILM Corporation (JP) 2023-02-08 — — EP disclosed
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