SCHEMBL24996359

SCHEMBL24996359

COC(OC1=CC=C(c2cc(-c3ccc(OC(OC)C(C)(C)C)cc3)cc(C3=CC=C(OC(OC)C(C)(C)C)CC3C)c2S(=O)(=O)O)C(C)C1)C(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23432887 0.81 PRKAB2 (0.34) —
SCHEMBL25006128 0.68 BACE1 (0.35) —
SCHEMBL24995338 0.67 ERN1 (0.36) —
SCHEMBL26057587 0.66 MAP4K4 (0.33) —
SCHEMBL21784161 0.64 HSP90AA1 (0.30) —
SCHEMBL24995588 0.62 KIF11 (0.44) —
SCHEMBL21794146 0.62 SMN1; SMN2 (0.50) —
SCHEMBL21794096 0.61 PDE5A (0.36) —
SCHEMBL25006154 0.60 CYP1A2 (0.44) —
SCHEMBL21794138 0.59 ELANE (0.50) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4130878-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK FUJIFILM Corporation (JP) 2023-02-08 — — EP disclosed
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