Known targets — ChEMBL curated mechanism
ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Acetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 5/20 | 0.42 |
| ▸ | MAPT | P10636 | 2/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.39 |
| ▸ | TSHR | P16473 | 3/20 | 0.39 |
| ▸ | PIK3CA | P42336 | 1/20 | 0.39 |
| ▸ | THRB | P10828 | 2/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.36 |
| ▸ | MEN1 | O00255 | 2/20 | 0.36 |
| ▸ | MCL1 | Q07820 | 2/20 | 0.36 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.36 |
| ▸ | IMPDH2 | P12268 | 1/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.35 |
| ▸ | GLA | P06280 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | HPGD | P15428 | 1/20 | 0.35 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.35 |
| ▸ | POLB | P06746 | 3/20 | 0.34 |
| ▸ | CASP1 | P29466 | 1/20 | 0.34 |
| ▸ | GFER | P55789 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Bicarbonate SCHEMBL8746323 | 0.93 | TDP1 (0.43) | TDP1MAPTCYP3A4TSHRPIK3CA | |
| Oxalic Acid SCHEMBL21957821 | 0.91 | TDP1 (0.42) | TDP1MAPTCYP3A4TSHRPIK3CA | |
| Acetic Acid SCHEMBL28703177 | 0.85 | FFAR3 (0.44) | TDP1MAPTCYP3A4TSHRKDM4E | |
| Fumaric Acid SCHEMBL21957784 | 0.85 | MAPT (0.41) | TDP1MAPTCYP3A4TSHRPIK3CA | |
| Propionic Acid SCHEMBL11359484 | 0.85 | FFAR3 (0.40) | TDP1MAPTCYP3A4TSHRPIK3CA | |
| Malonic Acid SCHEMBL21957746 | 0.85 | TDP1 (0.38) | TDP1MAPTCYP3A4TSHRPIK3CA | |
| Maleic Acid SCHEMBL21957787 | 0.85 | MAPT (0.41) | TDP1MAPTCYP3A4TSHRPIK3CA | |
| Terephthalic Acid SCHEMBL21957808 | 0.85 | ALDH1A1 (0.50) | TDP1MAPTTSHRKDM4EKMT2A | |
| SCHEMBL33509 | 0.85 | CYP3A4 (0.50) | TDP1MAPTCYP3A4TSHRPIK3CA | |
| Dichloroacetic Acid SCHEMBL21957764 | 0.84 | TDP1 (0.41) | TDP1MAPTCYP3A4TSHRPIK3CA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 99 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10703702-B2 | Production system/production process for acrylic acid and precursors thereof | NOVOMER, INC. (US) | 2020-07-07 | — | — | US | claimed |
| US-20200148616-A1 | Production System/Production Process for Acrylic Acid and Precursors Thereof | NOVOMER, INC. | 2020-05-14 | — | — | US | claimed |
| CN-108026013-A | Production system/production method for acrylic acid and precursor thereof | 诺沃梅尔公司 | 2018-05-11 | — | — | CN | claimed |
| WO-2017023777-A9 | PRODUCTION SYSTEM/PRODUCTION PROCESS FOR ACRYLIC ACID AND PRECURSORS THEREOF | NOVOMER, INC. (US) | 2017-10-12 | — | — | WO | claimed |
| WO-2017023777-A1 | PRODUCTION SYSTEM/PRODUCTION PROCESS FOR ACRYLIC ACID AND PRECURSORS THEREOF | NOVOMER, INC. (US) | 2017-02-09 | — | — | WO | claimed |
| WO-2017023820-A1 | PRODUCTION SYSTEM/PRODUCTION PROCESS FOR ACRYLIC ACID AND PRECURSORS THEREOF | NOVOMER, INC. (US) | 2017-02-09 | — | — | WO | claimed |
| US-20170029352-A1 | PRODUCTION SYSTEM/PRODUCTION PROCESS FOR ACRYLIC ACID AND PRECURSORS THEREOF | NOVOMER, INC. | 2017-02-02 | — | — | US | claimed |
| US-8575245-B2 | Tunable polymer compositions | NOVOMER, INC. (US) | 2013-11-05 | — | — | US | claimed |
| US-20110257296-A1 | TUNABLE POLYMER COMPOSITIONS | NOVOMER, INC. (US) | 2011-10-20 | — | — | US | claimed |
| WO-2010075232-A1 | TUNABLE POLYMER COMPOSITIONS | NOVOMER, INC. (US) | 2010-07-01 | — | — | WO | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-20250084024-A1 | PRODUCTION SYSTEM/PRODUCTION PROCESS FOR ACRYLIC ACID AND PRECURSORS THEREOF | NOVOMER, INC. | 2025-03-13 | — | — | US | disclosed |
| US-12174541-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-12-24 | — | — | US | disclosed |
| US-4904460-A | Process for producing monosilane | MITSUBISHI KASEI CORPORATION (JP) | 1990-02-27 | — | — | US | disclosed |
| EP-0337322-A2 | Process for producing monosilane | MITSUBISHI KASEI CORPORATION (JP) | 1989-10-18 | — | — | EP | disclosed |
| US-4255553-A | COMPRISING A COMPOUND HAVING AT LEAST TWO EPOXY GROUPS, A POLYESTER OR ACRYLIC RESIN, AND A QUARTERNARY AMMONIUM CARBOXYLATE AS CATALYST | TOYO BOSEKI KABUSHIKI KAISHA (JP) | 1981-03-10 | — | — | US | disclosed |
| US-4188349-A | Process for curing unsaturated polyesters utilizing novel initiators | ICI AMERICAS INC. (US) | 1980-02-12 | — | — | US | disclosed |
| US-4095019-A | N-SUBSTITUTED AROMATIC AMINO DIACETIC ACIDS | ICI AMERICAS INC. (US) | 1978-06-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10703702-B2 | Production system/production process for acrylic acid and precursors thereof | PCCA, COASY, ALAD | TDP1 3562/4885MAPT 2335/4885CYP3A4 656/4885 |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | TDP1 787/4885MAPT 811/4885CYP3A4 1736/4885 |
| US-20250084024-A1 | PRODUCTION SYSTEM/PRODUCTION PROCESS FOR ACRYLIC ACID AND PRECURSORS THEREOF | PCCA, ALAD, COASY | TDP1 1682/4885MAPT 1773/4885CYP3A4 401/4885 |
| US-20170029352-A1 | PRODUCTION SYSTEM/PRODUCTION PROCESS FOR ACRYLIC ACID AND PRECURSORS THEREOF | PCCA, COASY, ALAD | TDP1 3562/4885MAPT 2335/4885CYP3A4 656/4885 |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | TDP1 2821/4885MAPT 1945/4885CYP3A4 3839/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | TDP1 3556/4885MAPT 2567/4885CYP3A4 3527/4885 |
| US-20200148616-A1 | Production System/Production Process for Acrylic Acid and Precursors Thereof | PCCA, COASY, ALAD | TDP1 3562/4885MAPT 2335/4885CYP3A4 656/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.