Methane

Methane

SCHEMBL27489507

C.F.O.[SiH4]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO

The experimentally established mechanism targets of Methane. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Methane SCHEMBL17074806 0.89
Methane SCHEMBL27432360 0.87
Fluoride SCHEMBL30529880 0.87
Methane SCHEMBL27565240 0.87
Fluoride SCHEMBL22287282 0.87
Methane SCHEMBL23235271 0.87
Fluoride SCHEMBL27501483 0.87
Methane SCHEMBL16058915 0.87
Methane SCHEMBL19084990 0.87
Fluoride SCHEMBL27951578 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112374482-B Silicon-oxygen-fluorine-carbon negative electrode material of lithium ion battery prepared by mechanochemical method 常州硅润新材料科技有限公司 2023-06-20 CN claimed
CN-112374482-A Lithium ion battery silicon-oxygen-fluorine-carbon negative electrode material prepared by mechanochemical method 孚林(常州)新材料科技有限公司 2021-02-19 CN claimed
CN-1100162-C Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation UNIV FUDAN (CN) 2003-01-29 CN claimed
CN-1288975-A Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation UNIV FUDAN (CN) 2001-03-28 CN claimed
CN-112374482-B Silicon-oxygen-fluorine-carbon negative electrode material of lithium ion battery prepared by mechanochemical method 常州硅润新材料科技有限公司 2023-06-20 CN disclosed
CN-112374482-B Silicon-oxygen-fluorine-carbon negative electrode material of lithium ion battery prepared by mechanochemical method 常州硅润新材料科技有限公司 2023-06-20 CN disclosed
CN-112374482-A Lithium ion battery silicon-oxygen-fluorine-carbon negative electrode material prepared by mechanochemical method 孚林(常州)新材料科技有限公司 2021-02-19 CN disclosed
CN-112374482-A Lithium ion battery silicon-oxygen-fluorine-carbon negative electrode material prepared by mechanochemical method 孚林(常州)新材料科技有限公司 2021-02-19 CN disclosed
CN-109166857-A Semiconductor structure and forming method thereof 长江存储科技有限责任公司 2019-01-08 CN disclosed
CN-1100162-C Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation UNIV FUDAN (CN) 2003-01-29 CN disclosed
CN-1288975-A Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation UNIV FUDAN (CN) 2001-03-28 CN disclosed
CN-1288975-A Alpha-SiCoF film as insulating dielectric with low dielectric constant and its preparation UNIV FUDAN (CN) 2001-03-28 CN disclosed