SCHEMBL27652152

SCHEMBL27652152

CCCCCc1cc(C(C)CO)co1

nearest known ligand 0.35

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ALOX15 P16050 1/20 0.35
PSEN1 P49768 1/20 0.34
PSEN2 P49810 1/20 0.34
APH1B Q8WW43 1/20 0.34
NCSTN Q92542 1/20 0.34
APH1A Q96BI3 1/20 0.34
PSENEN Q9NZ42 1/20 0.34
PTGS2 P35354 3/20 0.33
CYP3A4 P08684 1/20 0.33
TYR P14679 1/20 0.33
PPARA Q07869 1/20 0.32
ELANE P08246 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28087040 0.88 ABCB11 (0.33)
SCHEMBL27652160 0.81 ABCB11 (0.35) TYR
SCHEMBL9769157 0.70 MAPT (0.37) PTGS2CYP3A4TYRPPARAELANE
SCHEMBL11405473 0.70 PPARA (0.39) ALOX15PTGS2CYP3A4TYRPPARA
SCHEMBL3923663 0.70 MAPT (0.41) ALOX15PTGS2CYP3A4TYRPPARA
SCHEMBL28087108 0.70 ABCB11 (0.37)
SCHEMBL28113616 0.70 ALOX5 (0.46)
SCHEMBL11407867 0.69 PPARA (0.41) PTGS2CYP3A4PPARAELANE
SCHEMBL9769164 0.68 MAPT (0.44) PTGS2CYP3A4PPARAELANE
SCHEMBL547855 0.67 PTGS2 (0.36) ALOX15PTGS2CYP3A4TYRPPARA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106133604-B Protectant composition and protectant pattern forming method 三菱瓦斯化学株式会社 2019-09-06 CN disclosed
CN-109690361-A Optical component forms composition 三菱瓦斯化学株式会社 2019-04-26 CN disclosed
CN-104281006-B Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2019-01-22 CN disclosed
CN-108008600-A Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2018-05-08 CN disclosed
CN-107924123-A Photoetching material and its manufacture method, photoetching composition, pattern formation method and, compound, resin and their purification process 学校法人关西大学 2018-04-17 CN disclosed
CN-107430338-A RADIATION-SENSITIVE COMPOSITION 三菱瓦斯化学株式会社 2017-12-01 CN disclosed
CN-106133604-A Protectant composition and protectant pattern forming method 三菱瓦斯化学株式会社 2016-11-16 CN disclosed
CN-103946204-B Cyclic compound, its manufacture method, radiation-sensitive composition and corrosion-resisting pattern forming method 三菱瓦斯化学株式会社 2016-08-24 CN disclosed
CN-103717562-B Cyclic compound, its manufacture method, compositions and corrosion-resisting pattern forming method 三菱瓦斯化学株式会社 2016-08-24 CN disclosed
CN-105264440-A Resist composition MITSUBISHI GAS CHEMICAL CO 2016-01-20 CN disclosed
CN-104737073-A Resist composition MITSUBISHI GAS CHEMICAL CO 2015-06-24 CN disclosed
CN-104281006-A Radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO 2015-01-14 CN disclosed
CN-103733135-A Resist composition, method for forming resist pattern, polyphenol compound used for the same, and alcohol compound derived from the polyphenol compound MITSUBISHI GAS CHEMICAL CO 2014-04-16 CN disclosed
CN-1942825-B Resist composition MITSUBISHI GAS CHEMICAL CO 2010-05-12 CN disclosed
CN-1942825-A Resist composition MITSUBISHI GAS CHEMICAL CO (JP) 2007-04-04 CN disclosed